Abstract: A novel practicable type of gaseous optical gain medium for efficiently generating intense, highly monochromatic, continuous-wave (CW) or pulsed, coherent light beams is disclosed. Gain results from nonlinear optical pumping of a gas of ?-type “three-level” atoms, coherently phased (“dressed”) via application to the medium of two monochromatic laser beams tuned to the resonance frequencies ?0 and ??0. Nonlinear optical pumping of the “dressed-atom” gas is accomplished through the combined action of two separate physical processes: (1) A low pressure gaseous discharge, occurring continuously within the vessel containing the gain medium, produces intense narrow-band fluorescence at ?0 and ??0 through the process of electron impact excitation (EE).

Abstract: Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns.The composite can be made conductive by irradiating it with an UV excimer laser.

Abstract: Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns.The composite can be made conductive by irradiating it with an UV excimer laser.

Abstract: Disclosed is a process of effecting a change in the dielectric constant and coefficient of thermal expansion of a polyimide material, by forming a composite based on a dispersion of 2-60 wt. % of fluorinated particulate carbon material and a polyimide or polyimide precursor, and heating the dispersion to about 400.degree. C. at 65.degree.-200.degree. C./second.

Abstract: A display assembly includes a display screen having a predetermined generally planar area for displaying transmissive data. A light source is provided for generating light of predetermined intensity, and a circular Fresnel lens is disposed between the light source and the display means, the circular Fresnel lens imaging the light source through the display means and onto an opposite side of the display means. A diffuser is disposed between the light source and the display means for diffusing the light. The intensity of the light source is selected to be appropriate for direct human viewing of the transmissive data.

Abstract: A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As.

Abstract: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As.

Abstract: An apparatus and method for detecting a magnetic field has been described incorporating a material which switches from an antiferromagnetic order to a ferromagnetic order upon the application of a magnetic field and wherein the material is FeRh, FeRu, FePd or MnPt, a heating element for controlling the temperature of the material and a current source for sensing the change of resistance of the material to determine when the material is ferromagnetically ordered. The invention overcomes the problem of small changes in resistance of magnetoresistive sensors operating in only the ferromagnetic order.

Abstract: Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns. The composite can be made conductive by irradiating it with an UV excimer laser.

Abstract: A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As.

Abstract: A method of producing a multiphase polymer is disclosed whereby the phases have the same chemical structure but have different morphological states and thus different properties. This is achieved by forming a mixture of precursors of the polymer, at least one of the precursors having a reaction rate higher than the other precursor or precursors in the mixture. The precursor having the highest reaction rate is then converted to obtain a composite of a polymer and the precursors that are not polymerized. This mixture might also be formed by mixing a soluble polymer with its precursor.

Abstract: The invention provides a capacitor having increased capacitance comprising one or more main vertical trenches and one or more lateral trenches extending off the main vertical trench. The capacitor has alternating first and second regions, preferably silicon and non-silicon regions (for example, alternating silicon and germanium or alternating silicon and carbon regions). The etch characteristics of the alternating regions are utilized to selectively etch lateral trenches thereby increasing the surface area and capacitance of the capacitor. A method of fabricating the capacitors is also provided.

Abstract: A method and apparatus for producing fine line patterns on insulating surfaces utilizing a conductive spring-like cantilever having a pointed tip which is in proximity to the surface to be affected. Electrons emitted from the tip travel toward the insulator surface and cause changes therein or affect molecules located in the proximity of the insulator surface. Tunneling current is not required, and a highly conducting return current path for electrons through the insulator is not necessary. The incident electrons can be used to provide patterned, narrow-width features either by deposition of a material onto the insulator surface, or by producing etching in localized regions of the insulator surface, or by changing the insulator surface so that it can be etched.

Abstract: An electron microscope which includes a detector which is located in the magnetic field used to focus the primary electron beam onto the sample. The focusing magnetic field is used to energy-filter and/or energy analyze the scattered electrons without the need for additional equipment, such as a retarding-field energy filter. The magnetic field of the condenser-objective lens (or of any other type of magnetic lens) of the microscope provides the filtering and/or analyzing action, and the detector can be located so as to collect only low-loss electrons.

Abstract: Automated bonding of chips to tape and formation of bonding structures on Tape Automated Bonding (TAB) packaging structures are provided with bonding balls on the ends of beams leads of the TAB tape. Also balltape bonding balls are aligned on stacked TAB sheets and bonded together to form via interconnections through stacked balltape balls in multilayer, electronic packaging structures. Interconnection structures are provided for a universal chip connection laminate which can be applied between a chip and an MLC package. Area TAB tape, which comprises a modification of TAB tape provides balltape TAB connections by means of balltape bonds to areas within the interior of a chip whose leads are bonded in a TAB tape arrangement to the Inner Lead Bonds of the area tape.

Abstract: The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.

Abstract: Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.

Abstract: The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.

Abstract: A fluorescent material member covering a series array of solar cells that produce a high voltage operates to convert incident light to a uniform number of photons per cell.

Abstract: Apparatus for producing tunable intense coherent radiation at approximately 628 cm..sup.-1 with a line width less than 0.1 cm..sup.-1. The apparatus includes an optical cavity containing a vapor cell and pumping means including at least one optical pumping source for directing energy at the cavity. In one embodiment the cavity encloses a material capable of stimulated emission in response to said pumping. The material has at least three atomic energy levels with at least a first and second atomic energy level separated by a particular energy quantum approximately equal to 628 cm.sup.-1 ; a transition from said first to said second atomic energy level favored over all other possible transitions from said first atomic energy level; said third atomic energy level, from which atoms can be pumped to said first atomic energy level in response to said pumping means. While this is consistent with classical laser operation the apparatus disclosed herein can also be used for stimulated Raman scattering.