Abstract: A Static Random Access Memory comprising a matrix arrangement of cells, each cell comprising:—a bistable loop of a first inverter and a second inverter, in which an input of the first inverter is coupled to an output of the second inverter at a first bistable node and an input of the second inverter is coupled to an output of the first inverter at a second bistable node;—a first access transistor connected between the first bistable node and a write bitline, the first access transistor having a control terminal connected to a write wordline, and—a second access transistor connected between the second bistable node and a line being the complement of the write bitline, the second access transistor having a control terminal connected to the write wordline wherein—a first separate read port is connected between a read bitline and a source potential, which first read port has at least two control terminals, one control terminal being connected to the second bistable node and one to a read wordline, and—a second se

Abstract: Electrical circuit comprising: A Dynamic Random Access Memory comprising a plurality of memory cells; An associated device connected to said memory via a data bus; Memory cell refresh means, in which: A refresh access is employed to refresh stored data in a memory cell, with the aid of said refresh means; A data access is employed to exchange data between the associated device and a memory cell via said data bus, said data access comprising a read access or a write access, wherein: The circuit comprises conflict check means that, for a given memory cell, detect and communicate a conflict between a requested access of a first type to said cell, said first type being one of a data access and a refresh access, and an ongoing access of a second type to said cell, said second type being the other of a data access and a refresh access.

Abstract: A word line driver circuit (10) is coupled to word lines (18) of a memory matrix, for example a matrix of content addressable cells (12). The word line driver circuit is capable of selecting a plurality of word lines simultaneously to permit writing into memory cells in a plurality of rows via the same bit line simultaneously. Cell strength control circuitry (17) reduces a drive strength required to write data into the cells, relative to a drive strength of the bit line driver circuits (15), at least during writing data into memory cells in a plurality of rows of memory cells. Preferably, the drive strength control circuitry (17) contain a resistive element in the power supply lines of the memory cells in a column, so that the supply voltage of the cells in the column is increasingly reduced when more current is drawn during writing of more cells simultaneously.

Abstract: The present invention relates to a method and circuit arrangement for performing an error correction in a memory arrangement in which a redundancy system is used. The addresses of faulty cells are recorded redundantly by applying a corresponding coding. Then, an error correction is applied to the faulty-address information before it is compared to an externally applied address. Thereby, errors due to faulty redundancy addresses can be prevented.

Abstract: A FIFO-register (10) according to the invention comprises a sequence of register cells (10.1, . . . ,10.m), which register cells have a data section (40) and a status section (30). Data (Din) provided at an input (20) is shifted via the data sections (40) in the register cells to an output (50). The status section (30) of each cell indicates whether the data section (40) of that cell contains valid data. The status section of a cell comprises a control unit (37) coupled to a status input (32), to a status output (33) and to a clock input (31), and generates an output clock signal (Cli), which controls charge controlling elements (35, 36) coupled to the status input and the status output and controls the data section (40). The status output (33) of a status section (30) and the status input (32?) of its successor (30?) share a common capacitive node (33).

Abstract: An integrated circuit contains a static memory cell with a pair of cross-coupled inverters. The outputs of the inverters are coupled to bitlines the main current channels of access transistors. The integrated circuit operates in a normal mode and in a test mode. In the test mode the conductivity of the access transistors is made relatively higher in proportion to the drive strength of the memory cell while substantially equal voltages are applied to the bitlines (for example by applying a voltage to the wordline that makes the access transistors more conductive than during access in the normal mode). An error is detected when this causes the state of the cell to flip.

Abstract: An integrated circuit contains a static memory cell with a pair of cross-coupled inverters. The outputs of the inverters are coupled to bitlines the main current channels of access transistors. The integrated circuit operates in a normal mode and in a test mode. In the test mode the conductivity of the access transistors is made relatively higher in proportion to the drive strength of the memory cell while substantially equal voltages are applied to the bitlines (for example by applying a voltage to the wordline that makes the access transistors more conductive than during access in the normal mode). An error is detected when this causes the state of the cell to flip.

Abstract: Write-in and/or read out amplifier for a capacitive source of logic signals, wherein the input of an inverting amplifier stage including insulated-gate field effect transistors is, in a first phase, connected to the output by a first switching unit and subsequently connected by a selection unit to the capacitive source, whereupon the charge on the input is restored by a third switching unit.

Abstract: A semiconductor storage device having a field-effect transistor with a floating insulating gate electrode on which information-containing charge can be stored by tunneling charge carriers between the semiconductor body and the gate electrode. According to the invention the recording and erasing voltage is applied between two juxtaposed surface zones of the same conductivity type present outside the channel region and the source and drain zones, one of the surface zones, which is preferably also the source or drain zone, being separated from the floating gate electrode by an insulating layer having a thickness of less than 0.01 micron through which charge carriers can tunnel. Recording and erasing can be carried out at low voltages and with a voltage source of the same polarity relative to a reference potential.