Abstract: A word line driver circuit (10) is coupled to word lines (18) of a memory matrix, for example a matrix of content addressable cells (12). The word line driver circuit is capable of selecting a plurality of word lines simultaneously to permit writing into memory cells in a plurality of rows via the same bit line simultaneously. Cell strength control circuitry (17) reduces a drive strength required to write data into the cells, relative to a drive strength of the bit line driver circuits (15), at least during writing data into memory cells in a plurality of rows of memory cells. Preferably, the drive strength control circuitry (17) contain a resistive element in the power supply lines of the memory cells in a column, so that the supply voltage of the cells in the column is increasingly reduced when more current is drawn during writing of more cells simultaneously.

Abstract: A FIFO-register (10) according to the invention comprises a sequence of register cells (10.1, . . . ,10.m), which register cells have a data section (40) and a status section (30). Data (Din) provided at an input (20) is shifted via the data sections (40) in the register cells to an output (50). The status section (30) of each cell indicates whether the data section (40) of that cell contains valid data. The status section of a cell comprises a control unit (37) coupled to a status input (32), to a status output (33) and to a clock input (31), and generates an output clock signal (Cli), which controls charge controlling elements (35, 36) coupled to the status input and the status output and controls the data section (40). The status output (33) of a status section (30) and the status input (32?) of its successor (30?) share a common capacitive node (33).

Abstract: The electronic device (10) has a data communication bus (12) consisting of a plurality of substantially parallel conductors (12a, 12b, 12c, 12d). A control circuit (14) controls the values driven onto the conductors (12a, 12b, 12c, 12d). Transition dependent delay elements (16a, 16b, 16c, 16d) are coupled between the control circuit (14) and the respective conductors (12a, 12b, 12c, 12d) to delay certain transitions on the data communication bus 12. In particular, one of the opposite transitions on neighboring conductors e.g. a first conductor (12a) and a second conductor (12b) is delayed, thus reducing the power required to charge the mutual capacitance between the first conductor (12a) and the second conductor (12b). Consequently, a data communication bus (12) with reduced power consumption is obtained.

Abstract: The present invention relates to a method and circuit arrangement for performing an error correction in a memory arrangement in which a redundancy system is used. The addresses of faulty cells are recorded redundantly by applying a corresponding coding. Then, an error correction is applied to the faulty-address information before it is compared to an externally applied address. Thereby, errors due to faulty redundancy addresses can be prevented.

Abstract: Random access memory unit having a plurality of test modes, which is constructed as an integrated circuit and which does not include specific input/output pins to define and to command the passage to test mode. This unit is equipped with means (1) for detecting whether a predefined sequence of logic signals, which is not contained, within a set of sequences which are normally used, but the voltages of which are nevertheless included within the range of voltages which are specified for such signals, is supplied to certain inputs (CE, WE, AO), and for placing the unit in-test mode when such a sequence has been detected. In order to define the nature of the test to be performed, address input terminals, (A1-A8) of the unit are connected to a test mode decoding circuit (2), in which the data applied to the said input terminals are used as data defining the nature of the test to be performed.