Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

Abstract: A method of forming a sample and performing correlative S/TEM and APM analysis is provided wherein a sample containing a region of interest is cut from a bulk of sample material and formed into an ultra-thin lamella. The lamella is then analyzed with an S/TEM to form an image. The lamella sample and mount may then go through a cleaning process to remove any contamination. The lamella containing the ROI is then embedded within a selected material and is formed into a needle-shaped sample. The needle-shaped sample is then analyzed with the APM and the resulting data is merged and correlated with the S/TEM data.

Abstract: A method of forming a sample and performing correlative S/TEM and APM analysis is provided wherein a sample containing a region of interest is cut from a bulk of sample material and formed into an ultra-thin lamella. The lamella is then analyzed with an S/TEM to form an image. The lamella sample and mount may then go through a cleaning process to remove any contamination. The lamella containing the ROI is then embedded within a selected material and is formed into a needle-shaped sample. The needle-shaped sample is then analyzed with the APM and the resulting data is merged and correlated with the S/TEM data.

Abstract: A method for aligning an energy beam to an object in an atom probe is disclosed. The method comprises monitoring at least one parameter indicative of an interaction between the energy beam and the object. A signal is generated in response to the interaction of the energy beam and the object. The signal is then used to effectuate control of the alignment of the energy beam to the object.

Abstract: A process for forming a shallow, lightly doped region in a semiconductor device. The method comprises the steps of providing a semiconductor substrate having a surface; growing an oxide layer on the substrate, the oxide having a thickness; depositing a layer of polysilicon on the oxide; patterning the polysilicon layer and the oxide layer to provide a gate structure; and implanting into the substrate a source and a drain region about the gate structure at an angle less than 90 degrees with respect to the surface of the substrate.

Abstract: The present semiconductor device and method of fabrication thereof includes the provision of a trench or via hole in a dielectric, with a barrier layer thereon extending into the trench or via hole. A layer of titanium is provided over the barrier layer, also extending into the trench or via hole, and aluminum or aluminum alloy is provided over the titanium layer. The barrier layer provides good conformal coverage while also preventing outgassing of the dielectric from adversely affecting the conductor. The barrier layer also serves as a wetting agent for the deposition and flowing of aluminum or aluminum alloy. The titanium layer can be extremely thin, or non-existent, so as to avoid significant growth of TiAl.sub.3 and the problems attendant thereto.

Abstract: A diode is formed at the tip of a pointed portion of a probe of a scanning probe microscope. When the diode is forward biased, the current through the diode varies with the temperature of the diode. The magnitude of the current is an indication of the temperature of the tip of the probe. If the tip is scanned over a surface, a thermal map of the surface can be made and hot spots on the surface located. In some embodiments, the pointed portion of the probe is made of a semiconductor material (for example, silicon). A layer of a metal (for example, platinum) is made to contact the semiconductor material of the pointed portion only at the tip of the pointed portion, thereby forming a very small temperature sensing Schottky diode at the tip of the pointed portion.

Abstract: A process for forming shallow and/or lightly doped regions of impurity concentration adjacent to source/drain semiconductor regions in a semiconductor device. In one embodiment, the invention comprises: (a) providing a semiconductor of a first conductivity type having a first surface; (b) forming a gate structure on said first surface, the gate structure including a gate oxide layer and a polysilicon layer, and a ledge; and (c) implanting an impurity of a second conductivity type into the material and the ledge whereby a portion of the implant enters the substrate after passing through the ledge area overlying the edge of the gate and enters the substrate to a first depth below the surface, while a second portion of the implant does not pass through the ledge and enters the substrate to a depth below the surface of the substrate deeper than the first portion.