Abstract: An advanced plant production system comprises a robust and efficient network of lighting, instrumentation and control and data acquisition systems, which are integrated together to maximize plant health, crop production, while conserving resources. The system provides an advanced user interface that can be accessed both locally and remotely. In some embodiments, the lighting can be controlled to mimic the circadian rhythm of the crops or the Sun, and can be matched to a particular type and/or maturity of plant. A sensor node which can be used in the plant production system comprises internal sensors, and can also be connected to other external sensors, to provide detailed environmental information. Several methods are described that can optimize the efficiency of the system, and can be used to improve the yield, value, and/or quality of crops.

Abstract: Phase change memory devices and methods for operating described herein are based on the discovery that, following an initial high current operation applied to a phase change memory cell to establish the high resistance reset state, the current-voltage (I-V) behavior of the memory cell under different bias voltages can be used to detect if the memory cell is a defect cell having poor data retention characteristics.

Abstract: Phase change memory devices and methods for operating described herein are based on the discovery that, following an initial high current operation applied to a phase change memory cell to establish the high resistance reset state, the current-voltage (I-V) behavior of the memory cell under different bias voltages can be used to detect if the memory cell is a defect cell having poor data retention characteristics.

Abstract: A memory includes a bit line and a phase change element. A first side of the phase change element is coupled to the bit line. The memory includes a first access device coupled to a second side of the phase change element and a second access device coupled to the second side of the phase change element. The memory includes a circuit for precharging the bit line and one of selecting only the first access device to program the phase change element to a first state and selecting both the first access device and the second access device to program the phase change element to a second state.

Abstract: A memory includes a bit line and a phase change element. A first side of the phase change element is coupled to the bit line. The memory includes a first access device coupled to a second side of the phase change element and a second access device coupled to the second side of the phase change element. The memory includes a circuit for precharging the bit line and one of selecting only the first access device to program the phase change element to a first state and selecting both the first access device and the second access device to program the phase change element to a second state.