Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

Abstract: An apparatus for culturing suspended photosynthetic organisms, specifically a flowing thin film photobioreactor is disclosed herein, wherein the flowing thin film photobioreactor comprises a light source and a trickle-film insert comprising screen material.

Abstract: An aramid paper suitable for use as electrical insulation comprising a first outer layer and a second outer layer, each of which comprising 70 to 30 weight percent aramid floc and 30 to 70 weight percent aramid fibrids, and each of which being free of mica and having a first face and a second face; an inner layer comprising 50 to 70 weight percent aramid material and 30 to 50 weight percent mica and having a first face and a second face; wherein the first face of the first outer layer is a first outer face of the aramid paper, and the second face of the first outer layer is coextensive with and bound face-to-face with the first face of the inner layer solely by fibrids in the first outer layer and the inner layer; and wherein the first face of the second outer layer is coextensive with and bound face-to-face with the second face of the inner layer solely by fibrids in the second outer layer and the inner layer, and the second face of the second outer layer is a second outer face of the aramid paper; the arami

Abstract: An aramid paper suitable for use as electrical insulation comprising a first outer layer and a second outer layer, each of which comprising 70 to 30 weight percent aramid floc and 30 to 70 weight percent aramid fibrids, and each of which being free of mica and having a first face and a second face; an inner layer comprising 50 to 70 weight percent aramid material and 30 to 50 weight percent mica and having a first face and a second face; wherein the first face of the first outer layer is a first outer face of the aramid paper, and the second face of the first outer layer is coextensive with and bound face-to-face with the first face of the inner layer solely by fibrids in the first outer layer and the inner layer; and wherein the first face of the second outer layer is coextensive with and bound face-to-face with the second face of the inner layer solely by fibrids in the second outer layer and the inner layer, and the second face of the second outer layer is a second outer face of the aramid paper; the arami

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: An apparatus for culturing suspended photosynthetic organisms, specifically a flowing thin film photobioreactor, wherein the flowing thin film photobioreactor comprises a light source and a trickle-film insert comprising screen material.

Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Abstract: A method for culturing suspended photosynthetic organisms is provided, comprising culturing the photosynthetic organism in a flowing thin film photobioreactor, wherein the flowing thin film photobioreactor comprises a light source and a trickle-film insert comprising screen material. In a preferred embodiment, the organism is Rhodobacter grown anaerobically; In an additional preferred embodiment, the organism is Botryococcus braunii.

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

Abstract: Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.

Abstract: Laminate structure suitable as electrical insulation comprising a mica-aramid layer of 35-55 wt % mica, 20-60 wt % binder, and 5 to 25 wt % aramid floc, the mica distributed uniformly in the mica-aramid layer; and an aramid layer comprising 35-75 wt % binder and 25-65 wt % aramid floc, the aramid layer being essentially free of mica; wherein the mica-aramid layer has a limiting oxygen index (LOI) of 37% or greater, and the aramid layer has a LOI of 30% or less and having a tensile strength and elongation greater than the mica-aramid layer; and the mica-aramid layer being homogeneously and continuously bound to the aramid layer; the laminate structure having a thickness of at least 0.10 mm, a LOI greater than 32%, and when exposed to a flame to determine LOI, the laminate burns as one piece.

Abstract: The present invention provides a method whereby the spatial relationship and orientations of one or more three-dimensional objects being illuminated by an optical projector, and the optical projector itself, can be very accurately defined both quickly and easily. The present invention also provides a novel computerized optical projection system whereby three-dimensional data when viewed by the human eye projected onto three-dimensional objects is not deformed as a result of the non-planar projection surface. In one embodiment, the invention provides computerized optical assembly or manufacturing guidance systems, and related methods, that provide step-by-step assembly or manufacturing instructions for instructing technicians how to assemble or manufacture three-dimensional objects or systems.

Abstract: Laminate structure suitable as electrical insulation comprising a mica-aramid layer of 35-55 wt % mica, 20-60 wt % binder, and 5 to 25 wt % aramid floc, the mica distributed uniformly in the mica-aramid layer; and an aramid layer comprising 35-75 wt % binder and 25-65 wt % aramid floc, the aramid layer being essentially free of mica; wherein the mica-aramid layer has a limiting oxygen index (LOI) of 37% or greater, and the aramid layer has a LOI of 30% or less and having a tensile strength and elongation greater than the mica-aramid layer; and the mica-aramid layer being homogeneously and continuously bound to the aramid layer; the laminate structure having a thickness of at least 0.10 mm, a LOI greater than 32%, and when exposed to a flame to determine LOI, the laminate burns as one piece.

Abstract: The present invention is directed to automated apparatuses and methods for measuring fastener hole depth, fastener length, countersink depth and/or hole diameters in a workpiece (or other object) in an automated and extremely rapid, efficient and accurate manner. The apparatuses may be operably connected with a power source and with one or a plurality of computers or other data collection devices to transmit fastener hole depth, countersink depth and/or hole diameter measurement data and/or information to them each time that a fastener hole is measured, while the apparatus is continuously measuring fastener holes (i.e., with no interruptions).

Abstract: The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.

Abstract: The present invention provides a method whereby the spatial relationship and orientations of one or more three-dimensional objects being illuminated by an optical projector, and the optical projector itself, can be very accurately defined both quickly and easily. The present invention also provides a novel computerized optical projection system whereby three-dimensional data when viewed by the human eye projected onto three-dimensional objects is not deformed as a result of the non-planar projection surface. In one embodiment, the invention provides computerized optical assembly or manufacturing guidance systems, and related methods, that provide step-by-step assembly or manufacturing instructions for instructing technicians how to assemble or manufacture three-dimensional objects or systems.