Patents by Inventor Roger F. DeKeersmaecker

Roger F. DeKeersmaecker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
    Patent number: 4217601
    Abstract: New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.
    Type: Grant
    Filed: February 15, 1979
    Date of Patent: August 12, 1980
    Assignee: International Business Machines Corporation
    Inventors: Roger F. DeKeersmaecker, Donelli J. DiMaria, Donald R. Young
  • Non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structure
    Patent number: RE31083
    Abstract: New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.
    Type: Grant
    Filed: December 5, 1980
    Date of Patent: November 16, 1982
    Assignee: International Business Machines Corporation
    Inventors: Roger F. DeKeersmaecker, Donelli J. DiMaria, Donald R. Young