Abstract: A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is sufficient to render the group II-VI semiconductor material in a single crystal form. The semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. Group II elements include zinc, cadmium, the alkaline earth metals such as beryllium, magnesium calcium, strontium, and barium, and mixtures thereof. Group VI elements include oxygen, sulfur, selenium, tellurium, and mixtures thereof. P-type dopants include, but are not limited to, nitrogen, phosphorus, arsenic, antimony, chalcogenides of the foregoing, and mixtures thereof.

Abstract: A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.

Abstract: Low dielectric constant group II-VI compounds, such as zinc oxide, and fabrication methods are disclosed. Low dielectric constant insulator materials are fabricated by doping zinc oxide with at least one mole % p-type dopant ion. Low dielectric constant zinc oxide insulator materials are fabricated by doping zinc oxide with silicon having a concentration of at least 1017 atoms/cm3. Low dielectric zinc oxide insulator materials are fabricated by doping zinc oxide with a dopant ion having a concentration of at least about 1018 atoms/cm3, followed by heating to a temperature which converts the zinc oxide to an insulator. The temperature varies depending upon the choice of dopant. For arsenic, the temperature is at least about 450° C.; for antimony, the temperature is at least about 650° C. The dielectric constant of zinc oxide semiconductor is lowered by doping zinc oxide with a dopant ion at a concentration at least about 1018 to about 1019 atoms/cm3.

Abstract: Methods of fabricating semiconductor p-n junctions and semiconductor devices containing p-n junctions are disclosed in which the p-n junctions contain concentration profiles for the p-type and n-type dopants that are controllable and independent of a dopant diffusion profile. The p-n junction is disposed between a layer of semiconductor doped with a p-type dopant and a layer of semiconductor doped with an n-type dopant. The p-n junction is fabricated using a crystal growth process that allows dynamic control and variation of both p-type and n-type dopant concentrations during the crystal growth process.

Abstract: Device for positioning, locking, and extracting mobile equipment with respect to a fixed support, of the type including two slideway elements 1, 2, one 1 of which is secured to the mobile equipment E and the other 2 of which is secured to the fixed support S, these elements 1, 2 being designed to guide the mobile equipment E in sliding on the fixed support S until complementary connectors secured on the one hand to the said equipment E and on the other hand to the said support S have been coupled together.This device is characterized in that it includes removable insertion tooling comprising means 9, 11, 15 for temporarily catching hold of a load-spreading body 10 on the fixed slideway element 2, it being possible for a press screw 16 to be screwed into this load-spreading body 10 so as to exert, via its end 20, a thrust on the mobile slideway element 1.