Patents by Inventor Roger Heckingbottom

Roger Heckingbottom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molecular beam epitaxy electrolytic dopant source
    Patent number: 4447276
    Abstract: A method of growing crystalline semiconductors such as GaAs is disclosed. The method involves epitaxial deposition from the vapor phase and provides dopant material such as sulphur in the form of a molecular beam. The molecular beam is developed by effusion from a knudsen cell. The difficulties previously encountered using sulphur as such a cell are counteracted by use of an electrochemical cell as the sulphur source. The technique allows complicated doping profiles to be produced.
    Type: Grant
    Filed: June 15, 1981
    Date of Patent: May 8, 1984
    Assignee: The Post Office
    Inventors: Graham J. Davies, Roger Heckingbottom, David A. Andrews