Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: A method of measuring properties of a sample using an electron beam. Coordinates of a measurement site on the sample, and a diameter of the electron beam are defined. Multiple measurement locations are determined within the measurement site, using the coordinates of the measurement site and the diameter of the electron beam. The measurement locations are selected such that the electron beam when directed at the multiple measurement locations (either through beam deflection or sample movement) substantially covers the measurement site. The electron beam is directed to the measurement locations and properties of the sample are measured at each of the measurement locations.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: Methods and apparatus are providing for characterizing thin films in an integrated circuit device. A target including multiple layers is scanned using an x-ray emission inducer. X-ray emissions characteristic of materials in the target are measured. In one example, multiple beam energies are used to conduct the scan. In another example, continuously varying beam energies are used. Information such as K-ratios or the intensity of the x-ray emissions is provided to determine the thickness and/or composition of layers in the scan target.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, the those electronic images are compared to detect any defects that may exist on one of the die.

Abstract: A method and apparatus, and variations of each, for inspecting a wafer defining at least one die thereon is disclosed. The present invention first obtains the electronic image equivalent of two die, and then determines the x and y offset between those electronic images. Prior to inspection for defects, those two electronic images are aligned by adjusting the x and y positions of one electronic image of one die with respect to the electronic image of the other die. Once that is accomplished, those electronic images are compared to detect any defects that may exist on one of the die.