Patents by Inventor Roger Malik

Roger Malik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doped photovoltaic semiconductor layers and methods of making
    Patent number: 12610650
    Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
    Type: Grant
    Filed: October 16, 2023
    Date of Patent: April 21, 2026
    Assignee: First Solar, Inc.
    Inventors: Sachit Grover, Stuart Irvine, Xiaoping Li, Roger Malik, Shahram Seyedmohammadi, Gang Xiong, Wei Zhang
  • Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same
    Patent number: 12356755
    Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.
    Type: Grant
    Filed: November 14, 2022
    Date of Patent: July 8, 2025
    Assignee: First Solar, Inc.
    Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
  • Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
    Patent number: 12261231
    Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: March 25, 2025
    Assignee: First Solar, Inc.
    Inventors: Sachit Grover, Chungho Lee, Xiaoping Li, Dingyuan Lu, Roger Malik, Gang Xiong
  • DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING
    Publication number: 20240063316
    Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 22, 2024
    Applicant: First Solar, Inc.
    Inventors: Sachit Grover, Stuart Irvine, Xiaoping Li, Roger Malik, Shahram Seyedmohammadi, Gang Xiong, Wei Zhang
  • Doped photovoltaic semiconductor layers and methods of making
    Patent number: 11791427
    Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
    Type: Grant
    Filed: October 25, 2021
    Date of Patent: October 17, 2023
    Assignee: First Solar, Inc.
    Inventors: Sachit Grover, Stuart Irvine, Xiaoping Li, Roger Malik, Shahram Seyedmohammadi, Gang Xiong, Wei Zhang
  • PHOTOVOLTAIC DEVICES AND SEMICONDUCTOR LAYERS WITH GROUP V DOPANTS AND METHODS FOR FORMING THE SAME
    Publication number: 20230082990
    Abstract: According to the embodiments provided herein, a photovoltaic device can include an absorber layer. The absorber layer can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer can include oxygen in a central region of the absorber layer. The absorber layer can include an alkali metal in the central region of the absorber layer. Methods for carrier activation can include exposing an absorber layer to an annealing compound in a reducing environment. The annealing compound can include cadmium chloride and an alkali metal chloride.
    Type: Application
    Filed: November 14, 2022
    Publication date: March 16, 2023
    Applicant: First Solar, Inc.
    Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
  • Photovoltaic devices and semiconductor layers with group V dopants and methods for forming the same
    Patent number: 11502212
    Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015 cm?3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: November 15, 2022
    Assignee: First Solar, Inc.
    Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
  • THIN FILM STACKS FOR GROUP V DOPING, PHOTOVOLTAIC DEVICES INCLUDING THE SAME, AND METHODS FOR FORMING PHOTOVOLTAIC DEVICES WITH THIN FILM STACKS
    Publication number: 20220285569
    Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
    Type: Application
    Filed: May 23, 2022
    Publication date: September 8, 2022
    Applicant: First Solar, Inc.
    Inventors: Sachit Grover, Chungho Lee, Xiaoping Li, Dingyuan Lu, Roger Malik, Gang Xiong
  • Solar cells and methods of making the same
    Patent number: 11367805
    Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.
    Type: Grant
    Filed: July 12, 2017
    Date of Patent: June 21, 2022
    Assignee: First Solar, Inc.
    Inventors: Andrei Los, Roger Malik
  • Thin film stacks for group V doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
    Patent number: 11342471
    Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: May 24, 2022
    Assignee: First Solar, Inc.
    Inventors: Sachit Grover, Chungho Lee, Xiaoping Li, Dingyuan Lu, Roger Malik, Gang Xiong
  • DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING
    Publication number: 20220045225
    Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
    Type: Application
    Filed: October 25, 2021
    Publication date: February 10, 2022
    Applicant: First Solar, Inc.
    Inventors: Sachit Grover, Stuart Irvine, Xiaoping Li, Roger Malik, Shahram Seyedmohammadi, Gang Xiong, Wei Zhang
  • Methods for group V doping of photovoltaic devices
    Patent number: 11201257
    Abstract: According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.
    Type: Grant
    Filed: January 14, 2019
    Date of Patent: December 14, 2021
    Assignee: First Solar, Inc.
    Inventors: Sachit Grover, Dingyuan Lu, Roger Malik, Gang Xiong
  • Doped photovoltaic semiconductor layers and methods of making
    Patent number: 11158749
    Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: October 26, 2021
    Assignee: First Solar, Inc.
    Inventors: Sachit Grover, Stuart Irvine, Xiaoping Li, Roger Malik, Shahram Seyedmohammadi, Gang Xiong, Wei Zhang
  • DOPED PHOTOVOLTAIC SEMICONDUCTOR LAYERS AND METHODS OF MAKING
    Publication number: 20210143288
    Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.
    Type: Application
    Filed: February 22, 2018
    Publication date: May 13, 2021
    Applicant: First Solar, Inc.
    Inventors: Sachit Grover, Stuart Irvine, Xiaoping Li, Roger Malik, Shahram Seyedmohammadi, Gang Xiong, Wei Zhang
  • METHODS FOR GROUP V DOPING OF PHOTOVOLTAIC DEVICES
    Publication number: 20210036178
    Abstract: According to the embodiments provided herein, a method for doping an absorber layer can include contacting the absorber layer with an annealing compound. The annealing compound can include cadmium chloride and a group V salt comprising an anion and a cation. The anion, the cation, or both can include a group V element. The method can include annealing the absorber layer, whereby the absorber layer is doped with at least a portion of the group V element of the annealing compound.
    Type: Application
    Filed: January 14, 2019
    Publication date: February 4, 2021
    Applicant: First Solar, Inc.
    Inventors: Sachit Grover, Dingyuan Lu, Roger Malik, Gang Xiong
  • PHOTOVOLTAIC DEVICES AND SEMICONDUCTOR LAYERS WITH GROUP V DOPANTS AND METHODS FOR FORMING THE SAME
    Publication number: 20200381567
    Abstract: A photovoltaic device (100) can include an absorber layer (160). The absorber layer (160) can be doped p-type with a Group V dopant and can have a carrier concentration of the Group V dopant greater than 4×1015cm-3. The absorber layer (160) can include oxygen in a central region of the absorber layer (160). The absorber layer (160) can include an alkali metal in the central region of the absorber layer (160). Methods for carrier activation can include exposing an absorber layer (160) to an annealing compound in a reducing environment (220). The annealing compound (224) can include cadmium chloride and an alkali metal chloride.
    Type: Application
    Filed: December 7, 2017
    Publication date: December 3, 2020
    Applicant: First Solar, Inc.
    Inventors: Hongbo Cao, Sachit Grover, William Hullinger Huber, Xiaoping Li, Dingyuan Lu, Roger Malik, Hongying Peng, Joseph John Shiang, Qianqian Xin, Gang Xiong
  • ABSORBER LAYERS WITH MERCURY FOR PHOTOVOLTAIC DEVICES AND METHODS FOR FORMING THE SAME
    Publication number: 20200343402
    Abstract: According to the embodiments provided herein, a photovoltaic device can have an energy side configured to be exposed to a light source. The photovoltaic device can include an absorber layer. The absorber layer can include a first surface facing the energy side and a thickness defined between the first surface and a second surface. The absorber layer can include mercury having a mole fraction y, cadmium having a mole fraction (1?y), and tellurium. The mole fraction y of the mercury can vary through the thickness of the absorber layer with distance from the first surface of the absorber layer.
    Type: Application
    Filed: December 20, 2018
    Publication date: October 29, 2020
    Applicant: First Solar, Inc.
    Inventors: Paul King, Xiaoping Li, Roger Malik, Gang Xiong, Wei Zhang
  • THIN FILM STACKS FOR GROUP V DOPING, PHOTOVOLTAIC DEVICES INCLUDING THE SAME, AND METHODS FOR FORMING PHOTOVOLTAIC DEVICES WITH THIN FILM STACKS
    Publication number: 20200035844
    Abstract: According to the embodiments provided herein, a method for forming a photovoltaic device can include depositing a plurality of semiconductor layers. The plurality of semiconductor layers can include a doped layer that is doped with a group V dopant. The doped layer can include cadmium selenide or cadmium telluride. The method can include annealing the plurality of semiconductor layers to form an absorber layer.
    Type: Application
    Filed: February 27, 2018
    Publication date: January 30, 2020
    Applicant: First Solar, Inc.
    Inventors: Sachit Grover, Chungho Lee, Xiaoping Li, Dingyuan Lu, Roger Malik, Gang Xiong
  • Solar Cells and Methods of Making the Same
    Publication number: 20190363214
    Abstract: Solar cells, absorber structures, back contact structures, and methods of making the same are described. The solar cells and absorber structures include a pseudomorphically strained electron reflector layer.
    Type: Application
    Filed: July 12, 2017
    Publication date: November 28, 2019
    Applicant: First Solar, Inc.
    Inventors: Andrei Los, Roger Malik
  • Vacuum Deposition System For Solar Cell Production And Method Of Manufacturing
    Publication number: 20150040970
    Abstract: An inline vacuum deposition system contains thermal source pairs configured in adjacent deposition zones. Dopant sources allow the electrical characteristics of the sequentially formed layers to be controlled for a preferred deposition growth profile.
    Type: Application
    Filed: August 5, 2014
    Publication date: February 12, 2015
    Applicant: First Solar, Inc.
    Inventors: Raffi Garabedian, Roger Malik, Jeremy Theil, Jigish Trivedi, Ming Yu