Patents by Inventor Roger P. Holmstrom

Roger P. Holmstrom has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating submicron silicon structures such as permeable base transistors
    Patent number: 4510016
    Abstract: Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers.This method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel is formed in a silicon finger by a Schottky base, which at zero bias pinches off conduction of the channel. A bias voltage on the Schottky base causes conduction. The channel has a very short length making the transistor capable of high frequency operation.
    Type: Grant
    Filed: December 9, 1982
    Date of Patent: April 9, 1985
    Assignee: GTE Laboratories
    Inventors: Jim-Yong Chi, Roger P. Holmstrom