Abstract: A method for producing a contact through the pre-metal dielectric (PMD) layer of an integrated circuit, between the front end of line and the back end of line, and the device produced thereby are disclosed. The PMD layer includes oxygen. In one aspect, the method includes producing a hole in the PMD, depositing a conductive barrier layer at the bottom of the hole, depositing a CuMn alloy on the bottom and side walls of the hole, filling the remaining portion of the hole with Cu. The method further includes performing an anneal process to form a barrier on the side walls of the hole, wherein the barrier has an oxide including Mn. The method further includes performing a CMP process.

Abstract: The present invention is related to a method for the preparation of a composition for electroplating a copper-containing layer on a substrate. This method makes use of an aqueous solution that has at least: a source of copper Cu(II) ions, an additive to adjust the pH to a predetermined value, and a complexing agent for complexing Cu(II) ions. The complexing agent has the chemical formula: COOR1—COHR2R3 in which R1 is an organic group covalently bound to the carboxylate group (COO), R2 is either hydrogen or an organic group, and R3 is either hydrogen or an organic group. The solution has no reducing agent. The method involves providing electrons from a source not in direct contact with the solution, through transport means that provides the contact between said source and said solution. The present invention is also related to a process for forming a copper-containing layer on a substrate in an electroplating bath prepared according to the foregoing method.

Abstract: The present invention describes a method for copper deposition on a substrate having a barrier layer wherein a substrate (2) and an activator (1) are immersed in a copper plating bath in order to contact each other for a predetermined period.

Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electro less Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1—COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

Abstract: The present invention is related to a method for the preparation of a composition for electroplating a copper-containing layer on a substrate. This method makes use of an aqueous solution that has at least: a source of copper Cu (II) ions, an additive to adjust the pH to a predetermined value, and a complexing agent for complexing Cu (II) ions.

Abstract: The present invention describes a method for copper deposition on a substrate having a barrier layer wherein a substrate (2) and an activator (1) are immersed in a copper plating bath in order to contact each other for a predetermined period.

Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution.

Abstract: The present invention is related to the fabrication of at least a part of a Cu-containing layers or a Cu-containing pattern used for the electrical connection of active or passive devices as well as integrated circuits. Such Cu-containing patterns and/or layers are formed on an activated surface of a substrate by means of immersion of said substrate in an electroless Cu plating solution. Such a solution typically comprises: a source of copper Cu (II) ions; a reducing agent; an additive to adjust the pH of said aqueous solution to a predetermined value; and a chemical compound for complexing said Cu ions, said chemical compound having at least one part with chemical structure COOR1-COHR2, R1 being a first organic group covalently bound to the carboxylate group (COO), R2 being either hydrogen or a second organic group. Further disclosed is a method for depositing Cu on an activated surface and particularly on an activated surface of a Cu diffusion barrier layer.

Abstract: The method of the present invention is related to the fabrication of a copper-based multilevel interconnect structure. This copper-based multilevel interconnect structure is based on the formation of vertical metal connections through copper-containing metal stud growth on an underlying horizontal metal pattern, followed by a stud encapsulation step against copper diffusion into the surrounding dielectric, i.e. the insulating layers. This method is of particular interest when the insulating layers used to obtain this interconnect structure are polymer layers with a low dielectric constant and preferably with a high degree of planarization.

Abstract: The method of the present invention is related to the fabrication of a copper-based multilevel interconnect structure. This copper-based multilevel interconnect structure is based on the formation of vertical metal connections through copper-containing metal stud growth on an underlying horizontal metal pattern, followed by a stud encapsulation step against copper diffusion into the surrounding dielectric, i.e. the insulating layers. This method is of particular interest when the insulating layers used to obtain this interconnect structure are polymer layers with a low dielectric constant and preferably with a high degree of planarization.