Patents by Inventor Roger Raymond Kovalec

Roger Raymond Kovalec has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tapered gate electrode for semiconductor devices
    Patent number: 10903330
    Abstract: The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered sidewall. Further, the gate electrode includes a polysilicon layer disposed on top of the gate oxide layer and a metal silicide layer disposed on top of the polysilicon layer.
    Type: Grant
    Filed: November 27, 2013
    Date of Patent: January 26, 2021
    Assignee: General Electric Company
    Inventors: Richard Joseph Saia, Stephen Daley Arthur, Zachary Matthew Stum, Roger Raymond Kovalec, Gregory Keith Dudoff
  • TAPERED GATE ELECTRODE FOR SEMICONDUCTOR DEVICES
    Publication number: 20150144960
    Abstract: The subject matter disclosed herein relates to metal-oxide-semiconductor (MOS) devices, such as silicon carbide (SiC) power devices (e.g., MOSFETs, IGBTs, etc.) In an embodiment, a semiconductor device includes a gate oxide layer disposed on top of a semiconductor layer. The semiconductor device also includes a gate electrode having a tapered sidewall. Further, the gate electrode includes a polysilicon layer disposed on top of the gate oxide layer and a metal silicide layer disposed on top of the polysilicon layer.
    Type: Application
    Filed: November 27, 2013
    Publication date: May 28, 2015
    Applicant: General Electric Company
    Inventors: Richard Joseph Saia, Stephen Daley Arthur, Zachary Matthew Stum, Roger Raymond Kovalec, Gregory Keith Dudoff