Abstract: A solid state array device includes a plurality of pixels with associated respective TFT switching transistors; a plurality of first address lines disposed in a first layer of the array device; a plurality of second conductive address lines disposed in a second layer of the array device, respective ones of said first and second address lines being disposed substantially perpendicular to one another in a matrix arrangement such that respective ones of the second address lines overlie respective ones of the first address lines at respective crossover regions; a TFT gate dielectric layer disposed in a channel region of each of the pixel TFTs and further being disposed over the first address lines; and a crossover region supplemental dielectric layer disposed in respective ones of the crossover regions between the first and second address lines, but disposed so as to not extend over the TFT channel regions.

Abstract: A method of repairing an open circuit defect in a damaged address line in a thin film electronic imager device includes the steps of forming a repair area on the device so as to expose the open-circuit defect in the damaged address line and then depositing a conductive material to form a second conductive component and to coincidentally form a repair shunt in the repair area so as to electrically bridge the defect. The step of forming the repair area includes the steps of ablating dielectric material disposed over the first conductive component in the repair area, and etching the repair area so as to remove dielectric material disposed over the defect in the address line in the repair area such that the surface of the address line conductive material is exposed but is not contaminated by the removal of the overlying dielectric material.

Abstract: An imager array data line repair structure for use in high performance imager arrays includes a first and a second plurality of address lines that are disposed in respective layers with an intermediate layer having at least one insulative material disposed therebetween. The imager device further includes at least one integral address line repair segment that is disposed in the same layer as the first address lines and that is electrically isolated from the first address lines; the integral address line repair segment is disposed so as to underlie a repair portion of the second address line, with the intermediate layer disposed therebetween, and has a width substantially the same as the overlying second address line.

Abstract: A method for repairing address lines in a thin film imager device includes the steps of removing non-conductive material from a selected repair area so as to expose an open circuit defect in a first conductive component and portions of the first conductive component adjoining the defect, and then depositing conductive material to form a second conductive component and to coincidentally form a repair shunt in the selected repair area that is disposed in electrical contact with the adjoining exposed portions of the first conductive component so as to electrically bridge the open circuit defect. Removal of the non-conductive material to form the selected repair area is accomplished with an excimer laser, allowing the formation of a selected repair area having desired dimensions and substantially planar surfaces.

Abstract: A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.

Abstract: Repair lines in an imager device include protective layers disposed over steps in the repair lines where the repair lines extend over underlying components in the imager array. The protective layers each include a layer of polyimide to provide protection for the step portions of the conductive repair line from etchants and the like to which the conductive line is exposed during fabrication processes for the imager array. The protective layers are disposed over the steps of a conductive line in a repair crossover region so as to provide a repair area free from the protective material of the protective layers disposed thereon in the repair crossover region where the conductive repair line is disposed in vertical alignment with an underlying address line.

Abstract: A solid state radiation imager pixel having a thin film transistor (TFT) coupled to a photodiode in which the photodiode and the TFT each comprise a common dielectric layer, that is, a single dielectric layer that extends across the pixel and that has a gate dielectric layer portion and a photodiode body passivation portion. The common dielectric layer comprises a monolithic dielectric material such as silicon nitride or silicon oxide. Further, the bottom electrode of the photosensor body and the gate electrode are each disposed on a common surface of the substrate and comprise the same conductive material, the conductive material having been deposited on the pixel in the same deposition process. The source and drain electrodes and the common contact electrode for the photodiode each comprises the same source/drain metal conductive material, the conductive material having been deposited on the pixel in the same deposition process.

Abstract: An active electrical array wafer includes a substrate on which are disposed a plurality of layers of electrically conductive components, such as sets of address lines (for example scan and data lines) that are electrically insulated from one another by a dielectric material. Static protection capacitors to protect against the discharge of static potential between the layers of electrically conductive components are disposed at selected points on the wafer. A static protection line is disposed so as to cross over scan or data lines extending from the active area of the array towards the edge of the wafer. A dielectric material, such as the dielectric material separating the scan and data lines in the active area of the array, is disposed between the static protection line and the crossing-over address line, thereby forming a capacitor in which the two electrodes are the overlying portions of the respective address line and the static protection line.

Abstract: A thin film electronic display device having electrically conductive transmission lines disposed therein has embedded repair lines positioned to be electrically coupleable to the transmission lines internally to the display device so that an open circuit on a transmission line can be bypassed by a repair line electrically coupled to the defective transmission line. A method of repairing a defective transmission line in this electronic display device includes identifying the defective transmission line, electrically isolating the defective portion of the transmission line, and electrically connecting the transmission line to its associated repair line.