Abstract: Disclosed herein is a photosensitive composition that includes: a novolak polymer; one or more crosslinkers; photoacid generator; and a hydroxybenzophenone compound having the general structure (I) wherein m is 0 to 3 and n is 0 to 4 and m+n may be 0 to 5

Abstract: Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively.

Abstract: A novel photoresist stripping liquid, used for removing superfluous photoresist on a substrate, comprises an organic solvent used for dissolving, a decrosslinking catalyst for accelerating stripping speed, and an anticorrosion agent for avoiding the substrate corrosion. The photoresist stripping liquid can shorten a stripping period, has no toxicity to human body and environment, and can thoroughly remove cross-linked photoresist after exposure, especially negative photoresist. In addition, the present invention also provides an application process of the photoresist stripping liquid. The process does not comprise heating and oscillation, thereby increasing the stripping speed and avoiding possible damage caused by auxiliary measures to the substrate.

Abstract: Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively.

Abstract: Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.

Abstract: Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.

Abstract: Materials and methods for manufacturing electronic devices and semiconductor components using low dielectric materials comprising polyimide based aerogels are described. Additional methods for manipulating the properties of the dielectric materials and affecting the overall dielectric property of the system are also provided.

Abstract: Lead-free solder compositions for bonding and sealing flat panel displays, CCD's, solar cells, light emitting diodes, and other optoelectronic devices are disclosed. The solders are based on alloys of Sn, Au, Ag, and Cu and one or more rare earth metals chosen from the following, Y, La, Ce, Pr, Sc, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Optionally, the compositions may comprise In, Bi, or Zn. The solder compositions exhibit superior bonding capability in joining dissimilar surfaces such as those present in both the flat panel display and light emitting devices. Additionally the solders provide a strong barrier to the diffusion of both water and oxygen into these devices thus promoting longer device life times.

Abstract: Lead-free solder compositions for bonding and sealing flat panel displays, CCD's, solar cells, light emitting diodes, and other optoelectronic devices are disclosed. The solders are based on alloys of Sn, Au, Ag, and Cu and one or more rare earth metals chosen from the following, Y, La, Ce, Pr, Sc, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. Optionally, the compositions may comprise In, Bi, or Zn. The solder compositions exhibit superior bonding capability in joining dissimilar surfaces such as those present in both the flat panel display and light emitting devices. Additionally the solders provide a strong barrier to the diffusion of both water and oxygen into these devices thus promoting longer device life times.

Abstract: Photoresist compositions having a resin binder with an acid labile blocking group with an activation energy in excess of 20 Kcal/mol. for deblocking, a photoacid generator capable of generating a halogenated sulfonic acid upon photolysis and optionally, a base.

Abstract: The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.

Abstract: In part, the present invention is directed towards a fluid composition, and systems and methods of making and using the same, wherein the fluid composition has an absorbance of less than about 2 cm?1.

Abstract: The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Abstract: The present invention provides acid labile protecting groups that can be utilized to protect one or more monomeric units of a polymeric constituent of a photoresist composition suitable for use in lithography. For example, in one embodiment, the acid labile protecting group is selected to be t-butoxymethyl which can be employed to protect, e.g., a hydroxystyrene or an acrylic acid moiety. The photoresist compositions of the invention can be utilized at any wavelength suitable for lithography, and particularly, at wavelengths below 248 nm, e.g., 157 nm.

Abstract: The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Abstract: The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly suitable for short wavelength imaging applications such as 193 nm. The ARCs of the invention are preferably used with an overcoated resist layer (i.e. bottom layer ARCs) and in general comprise novel ARC resin binders that can effectively absorb reflected sub-200 nm exposure radiation.

Abstract: An alkali soluble resin, preferably a phenolic resin, having a portion of its phenolic hydroxyl groups reacted to form a blocking group inert to acid or base. The polymer is used for the formulation of acid hardening photoresists and the presence of the inert blocking group enables development of an exposed photoresist with a strong developer without formation of microbridges between fine line features.

Abstract: A photoresist composition consisting of an acid or base generator, a crosslinking agent activated in the presence of an acid or base and an alkali soluble resin, preferably a phenolic resin, having a portion of its phenolic hydroxyl groups reacted to form a blocking group inert to acid or base. The presence of the inert blocking group enables development of an exposed photoresist with a strong developer without formation of microbridges between fine line features.

Abstract: The invention provides a radiation sensitive composition having a polymer binder of phenolic and cyclic alcohol units. At least a portion of the phenolic units and/or cyclic alcohol units of the polymer are bonded to acid labile groups. High solubility differentials between exposed and unexposed regions are realized with only moderate substitution of the binder with the acid labile groups.

Abstract: The invention provides a radiation sensitive composition having a polymer binder of phenolic and cyclic alcohol units. At least a portion of the phenolic units and/or cyclic alcohol units of the polymer are bonded to acid labile groups. High solubility differentials between exposed and unexposed regions are realized with only moderate substitution of the binder with the acid labile groups.