Abstract: In a semiconductor memory cell in which binary data is represented by the density of minority carriers stored in the inversion regions of two isolated MIS capacitors, a method of nondestructively recalling the datum stored therein is described. In this method, the minority carriers are extracted from either one or both of the inversion regions, and the resulting potential change across either one or both of the MIS capacitors is indicative of the datum stored in the memory cell. These memory cells can be used in random access memories with nondestructive recall and in content addressable memories.

Abstract: The memory cells in the rows of a random access memory are divided in to subrows, and an access transistor is used selectively isolate or connect the output terminals of each subrow of memory cells to the row line. When recalling the datum from a memory cell, the subrow is isolated, and thus the loading of the output signal from that memory cell is reduced. Consequently, an improved output signal can be obtained from a memory cell with a given size storage capacitance, or a smaller storage capacitance can be used in the memory cell, or both.

Abstract: A method for representing, entering, storing, and recalling binary data from a semiconductor memory cell. Using this method, binary data is represented by the number of charge carriers stored in the two potential wells formed in a semiconducting material beneath two electrodes. The data so stored is read by opening a channel between these two potential wells, permitting carriers to flow between them, and detecting the resulting change in the potential of the two electrodes.

Abstract: A semiconductor device for the storage of binary data and means for electrically selecting a particular device from an array of such devices and either recalling the data stored therein, or introducing data to be stored therein, or both. The device includes two conducting electrodes in close proximity to each other and separated from a semiconducting material by a layer of electrically insulating material. Voltages of the correct polarity applied between the electrodes and the semiconductor induce depletion regions in the semiconductor. The device also includes a P-N junction in the semiconducting material in a region near one of the depletion regions. Binary data is entered in, maintained in, and recalled from the device by manipulating the voltages applied to the two electrodes, and controlling the voltage applied across the P-N junction.