Abstract: A device (100) is described for actively or passively modulating incident radiation, the device comprising at least one diffraction means (10) adapted for evanescent wave excitation upon irradiation with the incident radiation, and an absorption layer (40) adjacent the at least one diffraction means (10) so that the evanescent waves can interact with the absorption layer (40). The absorption layer (40) has alterable absorption properties so as to alter the absorption of the evanescent waves resulting in modulating of the incident radiation. The device (100) may be for actively modulating incident radiation thus being e.g. a modulator for laser radiation. Alternatively, the device may be for passively modulating incident radiation, thus acting as a sensing device for sensing environmental parameters.

Abstract: A device (100) is described for actively or passively modulating incident radiation, the device comprising at least one diffraction means (10) adapted for evanescent wave excitation upon irradiation with the incident radiation, and an absorption layer (40) adjacent the at least one diffraction means (10) so that the evanescent waves can interact with the absorption layer (40). The absorption layer (40) has alterable absorption properties so as to alter the absorption of the evanescent waves resulting in modulating of the incident radiation. The device (100) may be for actively modulating incident radiation thus being e.g. a modulator for laser radiation. Alternatively, the device may be for passively modulating incident radiation, thus acting as a sensing device for sensing environmental parameters.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels. The socket of the invention has features and markers for attachment and alignment of optical transfer media such as optical fibers, optical fiber bundles and optical imaging fiber bundles. The alignment features and markers allow to align the optical transfer media to the connection for electrical signals. The markers can be integrated in or can be provided on a fiber optic face plate substrate forming part of the socket.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels.

Abstract: It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external apparatus for transmitting the optical signals, preferably via a high density of optical channels. The socket of the invention has features and markers for attachment and alignment of optical transfer media such as optical fibers, optical fiber bundles and optical imaging fiber bundles. The alignment features and markers allow to align the optical transfer media to the connection for electrical signals. The markers can be integrated in or can be provided on a fiber optic face plate substrate forming part of the socket.

Abstract: A novel radiation detector, a detection principle and an associated structure are provided for semiconductor substrate detectors in general and for CMOS based circuits in particular. For an optical detector, photons absorbed in the neutral zone of the substrate generate electron hole pairs that migrate by diffusion. A shadow mask gives a spatial modulation to the incident, and consequently, to the absorbed light in the semiconductor substrate. By measuring the magnitude of the spatial frequency component in the minority carrier distribution with a spatial frequency corresponding to that of the shadow mask, a fast detector is conceived. A shadow mask with higher spatial modulation frequency delivers a faster turn-off. The combination of a plurality of these detectors with an image fiber forms a basic system for constructing high-speed parallel optical interconnects between chips.

Abstract: An optoelectronic cell structure includes a plurality of pnpn-devices and circuitry for driving these pnpn-devices. The anodes or the cathodes of said pnpn-devices tied together form a competition node allowing differential charge amplification to take place. The unconnected electrode of each of the pnpn-devices is driven by a pair of complementary transistors. Light input on the pnpn-devices is converted into charge carriers. A forward bias amplifies the difference in charge content in the pnpn-devices by differential competition. A reverse bias turns off each pnpn-device at its own pace, the turn-off times rendering an estimate of the charge content in each pnpn-device present before turn-off. The total system forms a sensitive optical receiver for use in optical interconnects between two or more locations.

Abstract: The invention relates generally to optoelectronic pnpn devices and more particularly to a layer structure suitable for fast electrical complete turn-off of such devices and to a method for efficient and fast operation of such devices and differential pairs of such devices. The devices have four layers and three junctions, and the invention provides for complete depletion of both center layers. The differential pair of pnpn devices also provides a very sensitive optical receiver which combines a very high cycle frequency with a very high optical sensitivity.

Abstract: A differential pair of optoelectronic pnpn devices provided with probing impedances allows such pair to operate as an optical to optical, optical to electrical and electrical to optical transceiver. This basic transceiver is useful in situations where information transport is needed between two or more locations, e.g., optical interconnects in electronic computing systems. The transceiver can be repeated in arrays in connection with Si-VLSI circuitry for high bandwidth optical interconnect applications.

Abstract: An optical device provided with a junction region for reflecting radiation to be transmitted in the device, and a gate for controlling the electron density in said junction region, is fast and simple to manufacture.