Patents by Inventor Roger W. Key
Roger W. Key has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8143120Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: February 14, 2011Date of Patent: March 27, 2012Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20110133289Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: February 14, 2011Publication date: June 9, 2011Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7910425Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: March 19, 2010Date of Patent: March 22, 2011Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20100173459Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: March 19, 2010Publication date: July 8, 2010Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7713811Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: October 1, 2008Date of Patent: May 11, 2010Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Publication number: 20090029510Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: ApplicationFiled: October 1, 2008Publication date: January 29, 2009Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7449388Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: July 18, 2006Date of Patent: November 11, 2008Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key
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Patent number: 7176781Abstract: A resistor formed on a material layer of a semiconductor integrated circuit and a method for forming the resistor. The resistor comprises a region of resistive material with a plurality of conductive contacts or plugs in electrical contact with and extending away from the resistive material. A first and a second interconnect line are formed overlying the plugs and in conductive contact with one or more of the plurality of plugs, such that a portion of the resistive material between the first and the second interconnect lines provides a desired resistance. According to a method of the present invention, the plurality of conductive contacts are formed using a first photolithographic mask and the first and the second interconnect lines are formed using a second photolithographic mask. The desired resistance is changed by modifying the first or the second mask such that one or more dimensions of a region of the resistive material between the first and the second interconnect lines is altered.Type: GrantFiled: September 29, 2004Date of Patent: February 13, 2007Assignee: Agere Systems IncInventors: Daniel Charles Kerr, Roger W. Key, Bradley J. Albers, William A. Russell, Alan Sangone Chen
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Patent number: 7095094Abstract: A process for forming bipolar junction transistors having a plurality of different collector doping densities on a semiconductor substrate and an integrated circuit comprising bipolar junction transistors having a plurality of different collector doping densities. A first group of the transistors are formed during formation of a triple well for use in providing triple well isolation for complementary metal oxide semiconductor field effect transistors also formed on the semiconductor substrate. Additional bipolar junction transistors with different collector doping densities are formed during a second doping step after forming a gate stack for the field effect transistors. Implant doping through bipolar transistor emitter windows forms bipolar transistors having different doping densities than the previously formed bipolar transistors.Type: GrantFiled: September 29, 2004Date of Patent: August 22, 2006Assignee: Agere Systems Inc.Inventors: Daniel Charles Kerr, Michael Scott Carroll, Amal Ma Hamad, Thiet The Lai, Roger W. Key