Abstract: An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.

Abstract: A method of etching a generally planar surface of a semiconductor material to reveal flow pattern defects on the surface, by placing the material in a canted position, ranging from about 5.degree. to about 35.degree. from vertical, such that the generally planar surface of the material faces upwardly. The material is then immersed into a stagnant etchant solution. The surface of the material is etched such that bubbles nucleating at flow pattern defects on the surface of the canted material are released directly into the otherwise stagnant etchant solution.

Abstract: Semiconductor substrate materials, such as silicon, useful in the manufacture of electronic devices, such as integrated circuits, having a 0.05 to 2.0 micron thick layer of polysilicon on the backside to improve gettering capabilities of defects, contaminants and impurities away from the active device region of the substrate are provided with a 10 to 40 micron deep region from the surface having reduced oxygen concentration. The oxygen denuding is accomplished by heating the substrate material at a temperature of 1050.degree. to 1250.degree. C. first in the presence of oxygen to break up oxygen nuclei, secondly in the presence of oxygen and halogen to permit stacking fault retrogrowth and oxygen outdiffusion, and thirdly in the presence of oxygen, nitrogen and/or argon.