Abstract: A measuring station includes a left set of electrodes, including at least two electrically independent electrodes arranged to contact the underside of a user's left foot, a right set of electrodes, including at least two electrically independent electrodes arranged to contact the underside of a user's right foot, a direct voltage source, a switch configured to activate and deactivate a DC configuration in which at least one electrode of at least one set of electrodes is connected to the direct voltage source.

Abstract: A method to evaluate an electrochemical skin conductance (ESC) of a user body using a measurement device, the measurement device including a pair of electrodes including an anode and a cathode, a direct voltage source, a measurement resistor, control circuitry configured to set the electrical resistance value of the measurement resistor and to set the value of the direct voltage, wherein the method includes, by the control circuitry pre-stabilizing during a pre-stabilizing period, measuring during a measurement period following the pre-stabilization period.

Abstract: A method includes identifying drugs to be dispensed from medication containers within filling cabinets in a pharmacy dispensing system. The drugs are automatically dispensed from the medication containers into pill containers. The method also includes determining a distribution parameter for the medication containers. The distribution parameter represents one or more of a quantity of the drugs that is dispensed or a limit on dispensing the drugs. The method also includes determining at least one allocation of the drugs in the medication containers that differs from a current allocation of the drugs in the medication containers, and changing the current allocation of the drugs in the medication containers to increase a distribution velocity at which the drugs are dispensed from the pharmacy dispensing system.

Abstract: A thermometer device for temporal artery area measurement, configured to be used in a skin-touching stationary position, comprising an elongated body and a front portion having an end border arranged on a sensing plane (P), an array of N infrared sensors, with N greater than 8, a sensing region (SR) extending in the sensing plane over an area denoted SRA, at a distance denoted LF from a plane P2 containing the infrared sensors, the sensing region being encompassed within the border of the front end, an optical lens, interposed between the infrared sensors and the sensing region, to deviate light rays, wherein LF2<K×SRA, with K=3.

Abstract: A thermometer device for temporal artery area measurement, configured to be used in a skin-touching stationary position, comprising an elongated body and a front portion having an end border arranged on a sensing plane (P), an array of N infrared sensors, with N greater than 8, a sensing region (SR) extending in the sensing plane over an area denoted SRA, at a distance denoted LF from a plane P2 containing the infrared sensors, the sensing region being encompassed within the border of the front end, an optical lens, interposed between the infrared sensors and the sensing region, to deviate light rays, wherein LF2<K×SRA, with K=3.

Abstract: Method to determine the arterial stiffness of an individual user (U) standing on a personal electronic scale having a top surface with at least three conductive pads on one of the left or right side of the scale, /a/—acquiring weight variations, and extracting therefrom a ballistocardiogram of the user's heart beat, /b/—acquiring impedance plethysmography signals across one of the foot of the user, and extracting therefrom a blood pulse signal at the foot, /c/—calculating a time delay (DT) between the heart beat and the blood pulse signal arriving at the foot, /d/—deducing therefrom a value of the arterial stiffness of the user

Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: A method for fabricating a boron-comprising ink is provided. The method includes providing an inorganic boron-comprising material, combining the inorganic boron-comprising material with a polar solvent having a boiling point in a range of from about 50° C. to about 250° C., and combining the inorganic boron-comprising material with a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6.

Abstract: Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 ?m, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

Abstract: Dopant ink compositions for forming doped regions in semiconductor substrates and methods for fabricating dopant ink compositions are provided. In an exemplary embodiment, a dopant ink composition comprises a dopant compound including at least one alkyl group bonded to a Group 13 element or a Group 15 element. Further, the dopant ink composition includes a silicon-containing compound.

Abstract: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.

Abstract: Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

Abstract: The concurrent presentation technique provides information about content related to a source media currently being presented to a user in a fashion that allows the user to keep viewing the source media while either interactively or non-interactively perusing a list of related content. Thus, the user can see a list of related content without interrupting the presentation experience, and if desired, the user can choose to interact with the list to obtain further information about available related content.

Abstract: Compositions for forming doped regions in semiconductor substrates, methods for fabricating such compositions, and methods for forming doped regions using such compositions are provided. In one embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a moisture adsorption-minimizing component. In another embodiment, a dopant-comprising composition comprises a conductivity-determining type impurity dopant, a silicate carrier, a solvent, and a high boiling point material selected from the group consisting of glycol ethers, alcohols, and combinations thereof. The high boiling point material has a boiling point of at least about 150° C.

Abstract: Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.

Abstract: Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 ?m, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

Abstract: Method for simultaneously forming doped regions having different conductivity-determining type elements profiles are provided. In one exemplary embodiment, a method comprises the steps of diffusing first conductivity-determining type elements into a first region of a semiconductor material from a first dopant to form a doped first region. Second conductivity-determining type elements are simultaneously diffused into a second region of the semiconductor material from a second dopant to form a doped second region. The first conductivity-determining type elements are of the same conductivity-determining type as the second conductivity-determining type elements. The doped first region has a dopant profile that is different from a dopant profile of the doped second region.

Abstract: Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.

Abstract: Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.