Abstract: An electron cyclotron resonance apparatus capable of achieving a cryogenic cooling effect. By a radioactive motion property of radicals, a side wall etch of a photoresist can be avoided in fabrication of next generation integrated micropatterns. The apparatus also eliminates conflicting increase/decrease phenomenons occurring between the etch rate and the anisotropy and between the etch rate and the uniformity in general etching equipments. This achieves not only a desired vertical etch, but also a rapid etch rate. As a result, it is possible to eliminate factors of causing a complexity in the process using a conventional triple-layer photoresist (TLR) or multilayer photoresist (MTR) and degrading the yield and the productivity.

Abstract: An electron cyclotron resonance apparatus for treating a wafer by plasma generated by utilizing a resonance of electrons. The apparatus is constructed to improve a temperature uniformity of a wafer by injecting helium as a heat transfer medium between the wafer and a wafer pedestal on which the wafer is laid and thereby transferring a heat from the wafer to the wafer pedestal. The apparatus is also constructed to move a desired wafer treating position. As a result, it is possible to fabricate semiconductor devices having a superior performance.