Abstract: A process for production of metal(s) by molten-salt electrolysis includes direct non-carbothermic chlorinating of ore containing metal oxide(s) to produce metal chloride(s); and electrolysis of molten salt(s) of the metal chloride(s) for electrowinning of metal(s) product.

Abstract: A sensor for detecting lead in an aqueous solution includes a copper working electrode, a counter electrode, a power supply for applying underpotential deposition of lead onto the copper electrode, a measuring device for providing measurement of a hydrogen evolution reaction (HER) current on the Pbupd-modified electrode, and a controller configured to correlate the degree of suppression of the HER current to Pbupd coverage to determine the lead coverage and lead concentration of the solution.

Abstract: A sensor for detecting lead in an aqueous solution includes a copper working electrode, a counter electrode, a power supply for applying underpotential deposition of lead onto the copper electrode from the aqueous solution, a measuring device for providing measurement of a hydrogen evolution reaction (HER) current on the Pbupd-modified electrode, and a means for correlating the degree of suppression of the HER current to Pbupd coverage to determine the lead coverage and lead concentration of the solution.

Abstract: An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.

Abstract: An aqueous plating bath for the electroless deposition of iron boron alloy coatings, characterized in that it comprises at least one iron ion source, at least one boron based reducing agent, at least one complexing agent, at least one pH buffer and at least one base wherein its pH value is 11 or higher and the molar ratio of the boron based reducing agents in relation to the iron ions in the aqueous plating bath is at least 6:1. Also, a process for the use of said aqueous plating bath is disclosed. The aqueous plating bath according to the invention shows good stability and plating rate and yields glossy and homogeneous iron boron alloy coatings on various substrates. It is an advantage of the plating bath that it does not require any sacrificial anodes.

Abstract: An electrochemical cell and method for electrowinning a variety of multivalent metals including titanium is described. In one aspect, the invention provides an electrochemical cell comprising an anolyte chamber comprising an anode and configured for containing an anolyte, a catholyte chamber comprising a cathode and configured for containing a catholyte comprising a metal to be electrolytically produced, and a diaphragm separating the anolyte chamber and the catholyte chamber, the diaphragm configured to control the potential drop across the diaphragm so that it is below the potential difference required for inducing bipolarity at the diaphragm.

Abstract: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Abstract: Techniques are disclosed that enable an interconnect structure that is resistance to electromigration. A liner is deployed underneath a seed layer of the structure. The liner can be a thin continuous and conformal layer, and may also limit oxidation of an underlying barrier (or other underlying surface). A dopant that is compatible (non-alloying, non-reactive) with the liner is provided to alloy the seed layer, and allows for dopant segregation at the interface at the top of the seed layer. Thus, electromigration performance is improved.

Abstract: Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.

Abstract: Methods for making copper (Cu) interconnects in semiconductor devices for interconnect dimensions less than 50 nm are described. The processes form Cu interconnects using a sequence of barrier layer, liner layer, and Cu deposition layer depositions, followed by a thermally assisted Cu reflow of the Cu deposition layer, and then a chemical mechanical polish (CMP) to removed excess portions of the reflowed Cu. The liner layer comprises noble metals such as Ru, Ir, Os, Rh, Re, Pd, Pt, and Au. Such processes avoids the formation of voids in copper interconnects with dimensions less than 50 nm.

Abstract: A method comprising forming an interconnection opening through a dielectric material to a contact point; and electroplating a interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine. A method comprising forming an interconnection opening through a dielectric material to a contact point; lining the interconnection opening with a barrier layer and a seed layer; and electroplating an interconnection comprising copper in the contact opening using an electroplating bath comprising an alkoxylated sulfopropylated alkylamine.