Abstract: Embodiments disclosed herein include a semiconductor device and methods of forming such a device. In an embodiment, the semiconductor device comprises a substrate and a transistor on the substrate. In an embodiment, the transistor comprises a first gate electrode, where the first gate electrode is part of a first array of gate electrodes with a first pitch. In an embodiment, the first gate electrode has a first average grain size. In an embodiment, the semiconductor device further comprises a component cell on the substrate. In an embodiment, the component cell comprises a second gate electrode, where the second gate electrode is part of a second array of gate electrodes with a second pitch that is larger than the first pitch. In an embodiment, the second gate electrode has a second average grain size that is larger than the first average grain size.

Abstract: A method for producing laser emission, including the following steps: providing a layered semiconductor structure that includes a substrate, a lower reflector and a semiconductor collector region disposed over the substrate, a semiconductor base region disposed over the collector region, and a semiconductor emitter region disposed over the base region; providing, in the base region, at least one region exhibiting quantum size effects; depositing collector, base, and emitter electrodes respectively coupled with the collector, base, and emitter regions; disposing an insulating upper reflector over at least a portion of the emitter region; and applying electrical signals with respect to the collector, base, and emitter electrodes to produce laser emission from the base region in a vertical resonant optical cavity defined between the lower reflector and the insulating upper reflector.