Patents by Inventor Rohan Puligoru Reddy
Rohan Puligoru Reddy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984325Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.Type: GrantFiled: July 12, 2021Date of Patent: May 14, 2024Assignee: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20230386830Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.Type: ApplicationFiled: May 27, 2022Publication date: November 30, 2023Applicant: Applied Materials, Inc.Inventors: Xiaolin C. Chen, Baiwei Wang, Rohan Puligoru Reddy, Wanxing Xu, Zhenjiang Cui, Anchuan Wang
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Patent number: 11798813Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.Type: GrantFiled: April 26, 2021Date of Patent: October 24, 2023Assignee: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20230290647Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.Type: ApplicationFiled: March 8, 2022Publication date: September 14, 2023Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Rohan Puligoru Reddy, Xiaolin C. Chen, Zhenjiang Cui, Anchuan Wang
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Patent number: 11728177Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.Type: GrantFiled: February 11, 2021Date of Patent: August 15, 2023Assignee: Applied Materials, Inc.Inventors: Baiwei Wang, Oliver Jan, Rohan Puligoru Reddy, Xiaolin Chen, Zhenjiang Cui, Anchuan Wang
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Patent number: 11631589Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.Type: GrantFiled: May 4, 2021Date of Patent: April 18, 2023Assignee: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20230015080Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.Type: ApplicationFiled: July 15, 2021Publication date: January 19, 2023Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Rohan Puligoru Reddy, Xiaolin C. Chen, Zhenjiang Cui, Anchuan Wang
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Publication number: 20230010978Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.Type: ApplicationFiled: July 12, 2021Publication date: January 12, 2023Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20220359214Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.Type: ApplicationFiled: May 4, 2021Publication date: November 10, 2022Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Patent number: 11488835Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a substrate housed in a processing region with the plasma effluents. The substrate may define an exposed region of tungsten oxide. The contacting may produce a tungsten oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the tungsten oxy-fluoride material with the etchant precursor. The methods may include removing the tungsten oxy-fluoride material.Type: GrantFiled: November 20, 2020Date of Patent: November 1, 2022Assignee: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rohan Puligoru Reddy, Anchuan Wang
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Publication number: 20220344172Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.Type: ApplicationFiled: April 26, 2021Publication date: October 27, 2022Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Xiaolin C. Chen, Rohan Puligoru Reddy, Oliver Jan, Zhenjiang Cui, Anchuan Wang
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Publication number: 20220254648Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce oxygen plasma effluents. The methods may include contacting a substrate housed in a processing region with the oxygen plasma effluents. The substrate may define an exposed region of titanium nitride. The contacting may produce an oxidized surface on the titanium nitride. The methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce halogen plasma effluents. The methods may include contacting the oxidized surface on the titanium nitride with the halogen plasma effluents. The methods may include removing the oxidized surface on the titanium nitride.Type: ApplicationFiled: February 11, 2021Publication date: August 11, 2022Applicant: Applied Materials, Inc.Inventors: Baiwei Wang, Oliver Jan, Rohan Puligoru Reddy, Xiaolin Chen, Zhenjiang Cui, Anchuan Wang
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Publication number: 20220165580Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a remote plasma region of a semiconductor processing chamber while striking a plasma to produce plasma effluents. The methods may include contacting a substrate housed in a processing region with the plasma effluents. The substrate may define an exposed region of tungsten oxide. The contacting may produce a tungsten oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the tungsten oxy-fluoride material with the etchant precursor. The methods may include removing the tungsten oxy-fluoride material.Type: ApplicationFiled: November 20, 2020Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Zhenjiang Cui, Rohan Puligoru Reddy, Anchuan Wang
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Patent number: 11062921Abstract: Exemplary etching methods may include flowing a halogen-containing precursor into a substrate processing region of a semiconductor processing chamber. The halogen-containing precursor may be characterized by a gas density greater than or about 5 g/L. The methods may include contacting a substrate housed in the substrate processing region with the halogen-containing precursor. The substrate may define an exposed region of an aluminum-containing material. The contacting may produce an aluminum halide material. The methods may include flowing an etchant precursor into the substrate processing region. The methods may include contacting the aluminum halide material with the etchant precursor. The methods may include removing the aluminum halide material.Type: GrantFiled: September 11, 2020Date of Patent: July 13, 2021Assignee: Applied Materials, Inc.Inventors: Zhenjiang Cui, Anchuan Wang, Rohan Puligoru Reddy, Xiaolin Chen