Abstract: A method of manufacturing showerheads using a tool including a cutting attachment includes selecting first features of a plurality of features to be machined within a predetermined tolerance range of a specified dimension for the plurality of features; selecting second features of the plurality of features, that are interspersed with the first selected features, to be machined within the predetermined tolerance range of the specified dimension for the plurality of features; machining, using the cutting attachment, the first selected features within the predetermined tolerance range; and when a parameter associated with the tool causing variation in dimension of the first selected features reaches a predetermined threshold, machining, using the cutting attachment, the second selected features within the predetermined tolerance range. Mean and standard deviations of dimensions of the first and second selected features are less than or equal to predetermined mean and standard deviations.

Abstract: Systems and methods for redirecting cleaning chemistry flows within a multi-station semiconductor processing chamber are disclosed. In such systems, a cleaning chemistry flow, e.g., a plasma from a remote plasma generator, may be directed onto a hub of an indexer that is centrally mounted within the chamber. The hub may have features that cause the cleaning chemistry flows to be redirected in a radially outward direction. By rotating the hub and/or changing the relative elevational positions between the hub and a cleaning chemistry inlet that provides the cleaning chemistry, the cleaning chemistry may be redirected into different regions of the chamber, thereby allowing for a more thorough and complete cleaning process.

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A plurality of tri-lobed o-rings surrounding the conductive plate gas openings and the dielectric faceplate gas openings are configured to form a seal between the dielectric faceplate gas openings and the conductive plate gas openings from atmospheric pressure.

Abstract: Multiple station substrate processing chambers and methods are provided comprising four spatially separated substrate processing stations within a chamber wall are described. Independently controlled heating zones to the each of four spatially separated substrate processing stations and independently heated supply lines improve deposition uniformity of substrates simultaneously processed in each of the each of four spatially separated substrate processing stations.

Abstract: A method includes selecting first features to be machined within a first tolerance range, and second features, which are located at least a predetermined distance apart, to be machined within a second tolerance range of a specified dimension for the selected features. The method includes machining, using a cutting attachment of a tool, the first features within the first tolerance range, and when a parameter associated with the tool causing variation in dimension of the first selected features reaches a predetermined threshold, machining, using the cutting attachment, the second selected features within the second tolerance range. In a second method, a mean value of dimensions of the first and second features is less than or equal to a predetermined mean deviation from the specified dimension, and a standard deviation of the dimensions of the first and second features is less than or equal to a predetermined standard deviation.

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A conductive insert is disposed within at least one of the dielectric faceplate gas openings or adjacent o-rings included in the plasma showerhead assemblies.

Abstract: Plasma showerhead assemblies are disclosed comprising a conductive plate having a plurality of the conductive plate gas openings, a dielectric faceplate having a thickness and a plurality of dielectric faceplate gas openings extending through the dielectric faceplate thickness in fluid communication with the plurality of the conductive plate gas openings. A plurality of tri-lobed o-rings surrounding the conductive plate gas openings and the dielectric faceplate gas openings are configured to form a seal between the dielectric faceplate gas openings and the conductive plate gas openings from atmospheric pressure.

Abstract: Disclosed herein are fasteners for use in a semiconductor wafer process chamber. The fasteners may be used to secure hardware. The fasteners may include outermost surfaces that are provided by multiple different coatings, e.g., a hard coating and a dry lubricant coating. The hard coating may provide outermost surfaces of the fastener that are exposed to a plasma when a remote plasma clean is performed and may be used to prevent particle generation when the fastener is subjected to the remote plasma clean. The dry lubricant coating may provide outermost surfaces of a threaded portion of the fastener and may be used to prevent galling.

Abstract: Systems and methods for redirecting cleaning chemistry flows within a multi-station semiconductor processing chamber are disclosed. In such systems, a cleaning chemistry flow, e.g., a plasma from a remote plasma generator, may be directed onto a hub of an indexer that is centrally mounted within the chamber. The hub may have features that cause the cleaning chemistry flows to be redirected in a radially outward direction. By rotating the hub and/or changing the relative elevational positions between the hub and a cleaning chemistry inlet that provides the cleaning chemistry, the cleaning chemistry may be redirected into different regions of the chamber, thereby allowing for a more thorough and complete cleaning process.

Abstract: A system for supplying a gas to a plurality of stations of a substrate processing tool includes a gas source to supply the gas, a mass flow controller connected to the gas source, a plurality of conduits, and a plurality of heaters. The conduits are interconnected to each other and are in fluid communication with each other. The conduits include an inlet connected to the mass flow controller, a plurality of portions including a plurality of outlets, and a plurality of gas flow restrictors. The outlets are connected to respective manifolds to supply the gas to the stations. The gas flow restrictors are arranged in the respective portions of the plurality of conduits proximate to the outlets. The heaters are coupled to the respective portions of the conduits that are proximate to the outlets and that include the gas flow restrictors.

Abstract: A method includes selecting first features to be machined within a first tolerance range, and second features, which are located at least a predetermined distance apart, to be machined within a second tolerance range of a specified dimension for the selected features. The method includes machining, using a cutting attachment of a tool, the first features within the first tolerance range, and when a parameter associated with the tool causing variation in dimension of the first selected features reaches a predetermined threshold, machining, using the cutting attachment, the second selected features within the second tolerance range. In a second method, a mean value of dimensions of the first and second features is less than or equal to a predetermined mean deviation from the specified dimension, and a standard deviation of the dimensions of the first and second features is less than or equal to a predetermined standard deviation.