Patents by Inventor Rohit S. Takalkar

Rohit S. Takalkar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8563446
    Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: October 22, 2013
    Assignee: International Business Machines Corporation
    Inventors: Ashima B. Chakravarti, Jacob B. Dadson, Paul J. Higgins, Babar A. Khan, John J. Moore, Christopher C. Parks, Rohit S. Takalkar
  • Publication number: 20120228736
    Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.
    Type: Application
    Filed: May 18, 2012
    Publication date: September 13, 2012
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Ashima B. Chakravarti, Jacob B. Dadson, Paul J. Higgins, Babar A. Khan, John J. Moore, Christopher C. Parks, Rohit S. Takalkar
  • Patent number: 8236710
    Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: August 7, 2012
    Assignee: International Business Machines Corporation
    Inventors: Ashima B. Chakravarti, Jacob B. Dadson, Paul J. Higgins, Babar A. Khan, John J. Moore, Christopher C. Parks, Rohit S. Takalkar
  • Publication number: 20120086103
    Abstract: A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.
    Type: Application
    Filed: October 7, 2010
    Publication date: April 12, 2012
    Applicant: International Business Machines Corporation
    Inventors: ASHIMA B. CHAKRAVARTI, Jacob B. Dadson, Paul J. Higgins, Babar A. Khan, John J. Moore, Christopher C. Parks, Rohit S. Takalkar