Abstract: A radiation detector assembly is provided that includes a semiconductor detector, plural pixelated anodes disposed on a surface of the semiconductor detector, and at least one processor. Each pixelated anode generates a primary signal responsive to reception of a photon by the pixelated anode. The at least one processor is operably coupled to the pixelated anodes, and determines when a primary signal is generated by a given pixelated anode. Responsive to determining the presence of the primary signal in the given pixelated anode, the at least one processor disconnects the given pixelated anode from an electrical source, wherein a re-directed primary signal is directed to a surrounding pixelated anode of the given pixelated anode. The at least one processor identifies the surrounding pixelated anode, and assigns an event for the primary signal to a pre-determined sub-pixel portion of the given pixelated anode based on the identified surrounding pixelated anode.

Abstract: A radiation detector assembly is provided that includes a semiconductor detector, plural pixelated anodes disposed on a surface of the semiconductor detector, and at least one processor. Each pixelated anode generates a primary signal responsive to reception of a photon by the pixelated anode. The at least one processor is operably coupled to the pixelated anodes, and determines when a primary signal is generated by a given pixelated anode. Responsive to determining the presence of the primary signal in the given pixelated anode, the at least one processor disconnects the given pixelated anode from an electrical source, wherein a re-directed primary signal is directed to a surrounding pixelated anode of the given pixelated anode. The at least one processor identifies the surrounding pixelated anode, and assigns an event for the primary signal to a pre-determined sub-pixel portion of the given pixelated anode based on the identified surrounding pixelated anode.

Abstract: A radiation detector assembly is provided that includes a semiconductor detector, plural pixelated anodes disposed on a surface of the semiconductor detector, and at least one processor. Each pixelated anode is configured to generate a mixed primary signal responsive to reception of a photon by at least one surrounding anode of the pixelated anode and to generate a mixed secondary signal responsive to reception of a photon by the pixelated anode. The at least one processor is operably coupled to the pixelated anodes, and is configured to: acquire the mixed primary signal from a first pixelated anode; acquire the mixed secondary signal from a second pixelated anode; and count an event in the second pixelated anode responsive to acquiring the mixed primary signal from the first pixelated anode and the mixed secondary signal from the second pixelated anode.

Abstract: A radiation detector assembly is provided that includes a semiconductor detector, plural pixelated anodes, and at least one processor. The semiconductor detector has a surface. The plural pixelated anodes are configured to generate a primary signal responsive to reception of a photon by the pixelated anode and to generate at least one secondary signal responsive to an induced charge caused by reception of a photon by at least one surrounding anode. The at least one processor is configured to: acquire a primary signal from one of the anodes responsive to reception of a photon; acquire at least one secondary signal from at least one neighboring pixel of the one of the anodes, the at least one secondary signal defining a negative value; and determine an energy correction factor for the reception of the photon using the negative value of the at least one secondary signal.

Abstract: A radiation detector assembly is provided that includes a semiconductor detector, plural pixelated anodes, and at least one processor. The semiconductor detector has a surface. The plural pixelated anodes are configured to generate a primary signal responsive to reception of a photon by the pixelated anode and to generate at least one secondary signal responsive to an induced charge caused by reception of a photon by at least one surrounding anode. The at least one processor is configured to: acquire a primary signal from one of the anodes responsive to reception of a photon; acquire at least one secondary signal from at least one neighboring pixel of the one of the anodes, the at least one secondary signal defining a negative value; and determine an energy correction factor for the reception of the photon using the negative value of the at least one secondary signal.

Abstract: A system and a method are provided for utilizing excess heat generated by an industrial process, in an electrochemical process. The system comprising: an electrochemical reactor for carrying out an electrochemical reaction, wherein the electrochemical reaction requires a pre-defined minimal temperature to be carried out; means operative to receive a gaseous feed stream generated in the industrial process and being at an elevated temperature; an inlet for introducing one or more chemical reactants to the electrochemical reactor; wherein the system is characterized in that the gaseous feed stream temperature is not constant and for at least part of the time, the temperature of the gaseous feed stream received by the system is lower than the required pre-defined minimal temperature.

Abstract: A solar-driven apparatus is provided having: a cavity having at least one optical window for collecting electromagnetic radiation associated with solar energy impinging on said at least one optical window; a reaction assembly located inside the cavity and adapted to enable carrying out electrolysis process of at least one raw fluid utilizing energy derived partially from the solar radiation and partially from an electric source; one or more ingress units operative to allow introduction of the raw fluid into the apparatus; and one or more egress units operative to allow exit of the electrolysis process' products from the solar driven apparatus.