Patents by Inventor Rokutaro Ogawa

Rokutaro Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4500906
    Abstract: A semiconductor device comprising a semiconductor bulk in which a plurality of basic circuit elements are formed, first interconnecting lines being formed on a first insulation layer of said semiconductor bulk, a second insulation layer formed on both said first insulation layer and said first interconnecting lines, and a cell in which said basic circuit elements are connected with each other by said first interconnecting lines, wherein the first interconnecting line for connecting two of said basic elements in the cell has two separated parts, one end of each of said parts is connected to one of said basic elements, said second insulation layer is provided with a pair of through-holes in the cell, and each of said pair of through-holes contacts with the other end of each of said parts.
    Type: Grant
    Filed: May 14, 1982
    Date of Patent: February 19, 1985
    Assignee: Fujitsu Limited
    Inventors: Kenichi Ohno, Tohru Hosomizu, Rokutaro Ogawa
  • Patent number: 4255672
    Abstract: A large scale semiconductor integrated circuit device comprising plural transistors and resistors formed in one semiconductor substrate, and many emitter-coupled circuits formed by connecting the transistors and resistors with a double metallic layer on the substrate surface.Groups of these emitter coupled circuits are disposed in the form of arrays with circuits of several groups handling larger power than those of other groups, and resistance values in the emitter coupled circuits of the different groups are selected in accordance with the position and arrangement of each group to compensate for any potential variation between that group and the power supply and ground terminals between the groups and respective input/output terminals. Large scale transistors are provided for outputting the emitter-follower circuits. These groups contain the emitter coupled circuits, and are connected to the input/output terminals by the double metallic wiring layer.
    Type: Grant
    Filed: December 28, 1978
    Date of Patent: March 10, 1981
    Assignee: Fujitsu Limited
    Inventors: Kenichi Ohno, Tohru Hosomizu, Rokutaro Ogawa, Mitsuhisa Shimizu