Abstract: The presently claimed invention relates to a process for the recovery of 3-methyl-3-buten-1-ol from a stream obtained in the production of 3-methyl-3-buten-1-ol from 2-methylprop-1-ene and formaldehyde, by treating the stream with an amine catalyst.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous O3 solution and finally treated with water or an aqueous HCl solution, these treatments forming a treatment sequence.

Abstract: The invention specifies an information center (CC) in a telecommunication network and a method for operating said information center, where the information center (CC) is connected to an exchange (VST) and comprises both a mainframe (CTI), connected to the exchange (VST), and at least one information desk (AP) having at least one telecommunication terminal. The basic functions for operating the information center (CC) can be performed by a plurality of elements of the information center (CC), so that the failure of individual elements cannot result in the failure of the entire information center (CC). These include, firstly, call distribution, which can be performed both by the mainframe (CTI) and by the exchange (VST) itself, and secondly duplication of the telecommunication terminals, including the necessary data transfer paths.

Abstract: A centrifuge for a semiconductor wafer has a centrifuge plate for holding a semiconductor wafer, has a drive for setting the centrifuge plate in rotation, and has a device for supplying a medium to a front side and a rear side of the semiconductor wafer. The centrifuge has a housing which separates a centrifuging area and the semiconductor wafer from the environment, and a device for generating a laminar gas flow in the housing. A method for centrifuging a semiconductor wafer has the semiconductor wafer being centrifuged in a laminar gas flow.

Abstract: A centrifuge for a semiconductor wafer has a centrifuge plate for holding a semiconductor wafer, has a drive for setting the centrifuge plate in rotation, and has a device for supplying a medium to a front side and a rear side of the semiconductor wafer. The centrifuge has a housing which separates a centrifuging area and the semiconductor wafer from the environment, and a device for generating a laminar gas flow in the housing. A method for centrifuging a semiconductor wafer has the semiconductor wafer being centrifuged in a laminar gas flow.

Abstract: A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.

Abstract: A device for cleaning semiconductor wafers with a cleaning liquid, includes a cleaning station with a plurality of rotating pairs of rollers which are arranged one behind another and to which the cleaning liquid is applied. Each pair of rollers is formed by a top roller and a bottom roller, and the semiconductor wafer is conveyed between the pairs of rollers. There is also a conveyor means for conveying the semiconductor wafer to and from the cleaning station. The conveyor means has a film of conveyor liquid which is provided by the conveyor and on which the semiconductor wafer is conveyed. A supplying container provides the cleaning liquid to the top rollers in the form of a falling liquid which migrates over the rollers. There is also a method for cleaning semiconductor wafers in which such a device is used.

Abstract: A process for the chemical treatment of semiconductor wafers in the presence of HF and then in the presence of ozone, in particular for the cleaning of silicon semiconductor wafers, is such that the semiconductor wafers that are treated with the medium containing ozone are free of aqueous HF.

Abstract: A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous O3 solution and finally treated with water or an aqueous HCl solution, these treatments forming a treatment sequence.

Abstract: A cleaning agent and method are useful for cleaning semiconductor wafers. The aqueous cleaning agent has a pH of 1 to 5, preferably a pH of 1 to 3, and contains at least one surfactant and at least one compound which belongs to a group of compounds comprising succinic acid and its derivatives. To clean the semiconductor wafers, a thin film of cleaning agent is generated on the side faces of the semiconductor wafers, preferably using a mechanical tool.

Abstract: Silicon wafers can be provided with a hydrophilic surface and/or freed of hering cement residues originating from the polishing operation with the aid of solutions adjusted to a pH of 8 to 14 with the aid of alkali-metal or alkaline-earth-metal compounds and containing hydrogen peroxide. These processes can even be carried out at room temperature and are remarkable for their low chemical consumption and easy manageability.