Patents by Inventor Roland DIETMULLER

Roland DIETMULLER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10134931
    Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: November 20, 2018
    Assignee: Bengbu Design & Research Institute for Glass Industry
    Inventors: Jörg Palm, Stephan Pohlner, Thomas Happ, Thomas Dalibor, Roland Dietmüller
  • Patent number: 9871155
    Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x<0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z ?1.4.
    Type: Grant
    Filed: June 19, 2013
    Date of Patent: January 16, 2018
    Assignee: Bengbu Design & Research Institute for Glass Industry
    Inventors: Thomas Happ, Stefan Jost, Jörg Palm, Stephan Pohlner, Thomas Dalibor, Roland Dietmüller
  • Publication number: 20170033245
    Abstract: A layer system (1) for thin-film solar cells (100), comprising an absorber layer (4), which contains a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4), wherein the buffer layer (5) has a semiconductor material of the formula AxInySz, where A is potassium (K) and/or cesium (Cs), with 0.015?x/(x+y+z)?0.25 and 0.30?y/(y+z)?0.45.
    Type: Application
    Filed: December 23, 2014
    Publication date: February 2, 2017
    Inventors: Jorg Palm, Stephan Pohlner, Thomas Happ, Thomas Dalibor, Roland Dietmuller, Rajneesh Verma
  • Publication number: 20160233360
    Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4), which includes a chalcogenide compound semiconductor, and a buffer layer (5), which is arranged on the absorber layer (4) and includes halogen-enriched ZnxIn1-xSy with 0.01?x?0.9 and 1?y?2, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).
    Type: Application
    Filed: June 19, 2013
    Publication date: August 11, 2016
    Inventors: Jorg PALM, Stephan POHLNER, Thomas HAPP, Thomas DALIBOR, Roland DIETMULLER
  • Publication number: 20160163905
    Abstract: The invention concerns a layer system for thin-layer solar cells, said layer system comprising an absorber layer for absorbing light and a buffer layer on the absorber layer, said buffer layer containing NaxIny-x/3S, in which 0.063?x?0.625 and 0.681?y?1.50.
    Type: Application
    Filed: June 27, 2014
    Publication date: June 9, 2016
    Inventors: Jörg PALM, Stephan POHLNER, Thomas HAPP, Roland DIETMÜLLER, Thomas DALIBOR, Stefan JOST, Rajneesh VERMA
  • Publication number: 20150325722
    Abstract: The present invention relates to a layer system (1) for thin-film solar cells (100) and solar modules, comprising an absorber layer (4) that includes a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4) and includes halogen-enriched InxSy with ??x/y?1, wherein the buffer layer (5) consists of a first layer region (5.1) adjoining the absorber layer (4) with a halogen mole fraction A1 and a second layer region (5.2) adjoining the first layer region (5.1) with a halogen mole fraction A2 and the ratio A1/A2 is ?2 and the layer thickness (d1) of the first layer region (5.1) is ?50% of the layer thickness (d) of the buffer layer (5).
    Type: Application
    Filed: June 19, 2013
    Publication date: November 12, 2015
    Inventors: Jörg PALM, Stephan POHLNER, Thomas HAPP, Thomas DALIBOR, Stefan JOST, Roland DIETMÜLLER
  • Publication number: 20150295105
    Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x?0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z?1.4.
    Type: Application
    Filed: June 19, 2013
    Publication date: October 15, 2015
    Inventors: Thomas Happ, Stefan Jost, Jörg Palm, Stephan Pohlner, Thomas Dalibor, Roland Dietmüller