Abstract: A component (9) includes a first ceramic substrate (1), a ceramic fin cooler or a ceramic cooler through which liquid flows, having an upper face (1b) and a lower face (1a). A metallization (2) is applied to the upper face (1b), on which metallization a circuit (4) is mounted by its lower face. The circuit (4) of the component (9) is cooled on both sides by elements having high thermal conductivity and at the same time high electrical conductivity and thus the efficiency of the assembly is increased. A ceramic electrical/thermal conduction substrate (6) is attached by its lower face to the upper face of the circuit by a connection, and a second ceramic substrate (8) is arranged on the upper face of the electrical/thermal conduction substrate (6) via a metallization (7). The substrate (8) contains metal-filled thermal-electrical vias (11) and/or cooling channels to guide a coolant.

Abstract: A method for producing a copper multi-level metallization on a ceramic substrate consisting of AlN or Al2O3. High power regions with metallization having a high current-carrying capacity and low power regions with metallic coatings having a low current-carrying capacity are created on one and the same ceramic substrate. The metallization is printed multiple times in the high power range.

Abstract: To provide more space for additional circuit elements (coils, capacitors) and/or to allow the accommodation of additional circuit elements required for shielding the circuits, the metallization regions are arranged one over the other in at least two metallization layers. The carrier body has a surface on which sintered metallization regions are arranged in a first metallization layer, said metallization regions carrying electronic components and/or being structured such that the metallization regions form resistors or coils. The metallization regions are covered, together with the components and/or the resistors or coils, by a ceramic plate, and optionally additional metallization regions are arranged in additional metallization layers on the ceramic plate and each metallization region is covered by a ceramic plate. Sintered metallization regions are arranged in a metallization layer for the purpose of accommodating circuit elements on the uppermost ceramic plate facing away from the cooling elements.

Abstract: The invention relates to a component (9) comprising a first ceramic substrate (1) with an upper side (1b) and a lower side (1a), wherein a metallization (2) is applied on the upper side (1b), on which metallization an Si circuit (4) is mounted by its lower side via a connecting means (3). In order that the Si circuit (4) is cooled on both sides by elements with a high thermal conductivity and simultaneously a high electrical conductivity, and in order that the efficiency of the assembly is increased, according to the invention, a connecting means (5) is applied on the upper side (1b) of the Si circuit (4), on which connecting means a ceramic flat substrate (6) is attached by its lower side, and a second ceramic substrate (8) is arranged on the flat substrate (6) via a metallization (7), wherein the ceramic flat substrate (8) contains metal-filled thermal electrical vias (11) and/or cooling ducts for conveying a cooling means.

Abstract: A method for producing a copper multi-level metallization on a ceramic substrate consisting of AlN or Al2O3. High power regions with metallization having a high current-carrying capacity and low power regions with metallic coatings having a low current-carrying capacity are created on one and the same ceramic substrate. The metallization is printed multiple times in the high power range.

Abstract: To provide more space for additional circuit elements (coils, capacitors) and/or to allow the accommodation of additional circuit elements required for shielding the circuits, the metallization regions are arranged one over the other in at least two metallization layers. The carrier body has a surface on which sintered metallization regions are arranged in a first metallization layer, said metallization regions carrying electronic components and/or being structured such that the metallization regions form resistors or coils. The metallization regions are covered, together with the components and/or the resistors or coils, by a ceramic plate, and optionally additional metallization regions are arranged in additional metallization layers on the ceramic plate and each metallization region is covered by a ceramic plate. Sintered metallization regions are arranged in a metallization layer for the purpose of accommodating circuit elements on the uppermost ceramic plate facing away from the cooling elements.

Abstract: The invention relates to a method for producing a copper multi-level metallization on a ceramic substrate (4) consisting of AIN or Al2O3. High power regions (1) with metallization having a high current-carrying capacity and low power regions (2) with metallic coatings having a low current-carrying capacity are created on one and the same ceramic substrate (4). According to the invention, the metallization is printed multiple times in the high power range.