Abstract: An arrangement (1) with a mobile data carrier (2) and a handheld device (4) displays driving periods, rest periods and other types of activity recorded by a tachograph and evaluated by the hand-held device (4). The hand-held device has an evaluation unit (11), a display unit (6) and an input unit. In order to minimize the outlay necessary for evaluating the periods of time, the recording data (20) stored in digital form in a memory of the mobile data carrier (2) designed as a data card (3) can be transmitted via a data transmission interface (17), to computers or notebooks in the transport company or in the vehicle of the control units, and the evaluation unit (11) determines and evaluates the driving periods and/or rest periods and/or the period of time spent in other types of activity.

Abstract: An arrangement (1) with a mobile data carrier (2) and a handheld device (4) displays driving periods, rest periods and other types of activity recorded by a tachograph and evaluated by the hand-held device (4). The hand-held device has an evaluation unit (11), a display unit (6) and an input unit. In order to minimize the outlay necessary for evaluating the periods of time, the recording data (20) stored in digital form in a memory of the mobile data carrier (2) designed as a data card (3) can be transmitted via a data transmission interface (17), to computers or notebooks in the transport company or in the vehicle of the control units, and the evaluation unit (11) determines and evaluates the driving periods and/or rest periods and/or the period of time spent in other types of activity.

Abstract: The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.

Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

Abstract: Method of producing a structure for III-V semiconductor components in which a mask is applied to a sample in a masking step, characterized in that at least one mask material is a monocrystalline III-V semiconductor material. This makes possible an easy in-situ removal of the mask from the semiconductor material, which in turn makes possible the growing of additional layers.

Abstract: The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.

Abstract: A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.

Abstract: Method of producing a structure for III-V semiconductor components in which a mask is applied to a sample in a masking step, characterized in that at least one mask material is a monocrystalline III-V semiconductor material. This makes possible an easy in-situ removal of the mask from the semiconductor material, which in turn makes possible the growing of additional layers.

Abstract: A semiconductor laser on an InP substrate having a first confinement layer and a second confinement layer of (Ga.sub.0.17 Al.sub.0.83).sub.0.48 In.sub.0.52 As and an active layer in quantum well structure having radiation-generating QW-layers of Ga.sub.1-y In.sub.y As.

Abstract: The invention relates to a method for the production of extremely flat silicon troughs in a silicon substrate for MOS-transistors. The object is generally achieved by a localized etching process resulting in a slightly anisotropic trough characteristic and a subsequent rate controlled filling by a selection epitaxy process of said trough with a silicon material. The process is found to minimize the deleterious non-uniformities inherent in the prior art.