Abstract: A radiation detector for position-resolved detection of radiation comprises at least one sensor tile with a front side facing incident radiation, and a back side opposite the front side. The sensor tile comprises a sensor material sensitive to the radiation. A front electrode is arranged on the front side of the sensor tile. A braking layer is arranged on the front electrode and at least partly covers the front electrode, for decelerating electrons in the incident radiation. A set of contacts of electrically conducting material is arranged on the back side of the sensor tile and in contact with the sensor material, thereby defining sensor pixels. At least one ASIC comprises a set of readout circuits in electrical connection with the contacts, each readout circuit being configured to process a signal received from the sensor pixel the readout circuit is electrically connected to.

Abstract: A single photon counting pixel detector chip has a negligible dead time and consequentially high frame rates. The detector chip contains: a) a layer of photosensitive material; b) an N×M array of photo-detector diodes arranged in the layer of photosensitive material; and c) a N×M array of readout unit cells. The readout unit cell contains an input interface connected to a diode output interface, a high-gain charge to voltage amplifying device and a pixel counter being connected to an output of the high-gain voltage amplifying device. The pixel counter is split into a first number of nibble counters. The basic counter cell contains a counting element, a switch, a temporary storage element and an output stage. Additionally, the detector chip has a side shift register to read out the nibble counters row-wise with a predetermined number of nibble row selections.

Abstract: A single photon counting pixel detector chip has a negligible dead time and consequentially high frame rates. The detector chip contains: a) a layer of photosensitive material; b) an N×M array of photo-detector diodes arranged in the layer of photosensitive material; and c) a N×M array of readout unit cells. The readout unit cell contains an input interface connected to a diode output interface, a high-gain charge to voltage amplifying device and a pixel counter being connected to an output of the high-gain voltage amplifying device. The pixel counter is split into a first number of nibble counters. The basic counter cell contains a counting element, a switch, a temporary storage element and an output stage. Additionally, the detector chip has a side shift register to read out the nibble counters row-wise with a predetermined number of nibble row selections.