Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment, the optoelectronic semiconductor component includes at least one optoelectronic semiconductor chip for generating radiation and a housing, in which the at least one optoelectronic semiconductor chip is hermetically encapsulated. The housing includes a housing cover which is secured to a housing main part by a connection means. The housing additionally includes a gas exchange channel which is hermetically sealed by a seal.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Abstract: A lighting device (1) comprising at least one light source (5), at least one base (7) thermally and electrically operationally connected to the light source (5), and at least one bulb fitting (10, 27) provided for receiving the base (7). The base (7) has at least one first heat transfer surface (15) and the bulb fitting (10, 27) has at least one second heat transfer surface (17) in contact with the first heat transfer surface (15) either directly or by way of a foil (16). At least one device (14, 26, 32, 39) is provided for exerting a predefined press force between the first heat transfer surface (15) and the second heat transfer surface (17).

Abstract: An optoelectronic semiconductor component includes a light source, a housing and electrical connections, wherein the light source has a chip which emits primary radiation in the UV or blue region with a peak wavelength in particular in the region of 300 to 490 nm, wherein the primary radiation is partially or completely converted into radiation of a different wavelength by a previously applied conversion element, characterized in that the conversion element has a translucent or transparent substrate, which is manufactured from ceramic or glass ceramic, wherein a glass matrix is applied to the substrate, with a phosphor being embedded in said glass matrix.

Abstract: A high pressure discharge lamp may include a ceramic discharge vessel and a longitudinal axis, wherein at least one electrode is led out of the discharge vessel by means of a metal-containing feed-through, wherein the feed-through is connected to one end of the discharge vessel by way of a ceramic-containing adjustment part, wherein the adjustment part is tubular and consists of individual layers with different compositions, at least two materials A and B forming a plurality of layers of the adjustment part, these materials being chosen such that their coefficient of thermal expansion is between that of the feed-through and that of the end of the discharge vessel or at most is just outside, the layer thickness of each layer being so low that no shearing forces can occur, and the layer thickness of each layer of the same material being different.

Abstract: An opaque zone in the polycrystalline (PCA) discharge vessel of a high intensity discharge lamp may be made by creating residual pores in predetermined regions of the final-sintered discharge vessel. The control over the placement of the opaque zone is achieved by forming a carbonaceous residue in a specific region of the discharge vessel prior to final sintering. During sintering, the carbonaceous material causes residual porosity in the sintered PCA. The higher emissivity of the opaque PCA provides localized cooling in order to provide more control over the condensate behavior in the discharge vessel.

Abstract: A high-pressure discharge lamp may include a ceramic discharge vessel and a longitudinal axis, with electrodes respectively being led out from the discharge vessel by means of a feed-through via capillaries, wherein a tubular cermet part, which consists of individual layers of different composition layered axially in succession, is fitted on the capillary, each layer containing Mo and Al2O3, the proportion of Mo in the first layer facing toward the capillary being from 3 to 15 vol. % and in the last layer being from 85 to 97 vol. %, and a molybdenum cover cap, the cover cap being welded to the feed-through and the cover cap being connected to the cermet part by means of solder containing metal, and the connection between the capillary and the cermet part being established by means of high-melting glass solder or sinter-active Al2O3 powder.

Abstract: A lighting device (1) comprising at least one light source (5), at least one base (7) thermally and electrically operationally connected to the light source (5), and at least one bulb fitting (10, 27) provided for receiving the base (7). The base (7) has at least one first heat transfer surface (15) and the bulb fitting (10, 27) has at least one second heat transfer surface (17) in contact with the first heat transfer surface (15) either directly or by way of a foil (16). At least one device (14, 26, 32, 39) is provided for exerting a predefined press force between the first heat transfer surface (15) and the second heat transfer surface (17).

Abstract: A high pressure discharge lamp may include a ceramic discharge vessel and a longitudinal axis, wherein at least one electrode is led out of the discharge vessel by means of a metal-containing feed-through, wherein the feed-through is connected to one end of the discharge vessel by way of a ceramic-containing adjustment part, wherein the adjustment part is tubular and consists of individual layers with different compositions, at least two materials A and B forming a plurality of layers of the adjustment part, these materials being chosen such that their coefficient of thermal expansion is between that of the feed-through and that of the end of the discharge vessel or at most is just outside, the layer thickness of each layer being so low that no shearing forces can occur, and the layer thickness of each layer of the same material being different.

Abstract: An opaque zone in the polycrystalline (PCA) discharge vessel of a high intensity discharge lamp may be made by creating residual pores in predetermined regions of the final-sintered discharge vessel. The control over the placement of the opaque zone is achieved by forming a carbonaceous residue in a specific region of the discharge vessel prior to final sintering. During sintering, the carbonaceous material causes residual porosity in the sintered PCA. The higher emissivity of the opaque PCA provides localized cooling in order to provide more control over the condensate behavior in the discharge vessel.

Abstract: An opaque zone in the polycrystalline (PCA) discharge vessel of a high intensity discharge lamp may be made by creating residual pores in predetermined regions of the final-sintered discharge vessel. The control over the placement of the opaque zone is achieved by forming a carbonaceous residue in a specific region of the discharge vessel prior to final sintering. During sintering, the carbonaceous material causes residual porosity in the sintered PCA. The higher emissivity of the opaque PCA provides localized cooling in order to provide more control over the condensate behavior in the discharge vessel.

Abstract: In various embodiments, a discharge vessel for a high-pressure discharge lamp may include a plurality of parts from ceramic material, wherein the discharge vessel is made of at least two stacked layers.