Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A photovoltaic module is specified, comprising: a cylindrical light-transmissive tube enclosing an interior and having a main extension direction and a curved inner surface facing the interior, and a mechanically flexible photovoltaic component comprising a solar cell arrangement applied on a carrier film, wherein the photovoltaic component is arranged in the interior, the solar cell arrangement has a curvature, wherein the curvature follows the curved course of the inner surface of the tube at least in places and the solar cell arrangement at least partly covers the inner surface, wherein the covered inner surface forms a light passage surface of the photovoltaic module.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract: A photovoltaic module is specified, comprising: a cylindrical light-transmissive tube enclosing an interior and having a main extension direction and a curved inner surface facing the interior, and a mechanically flexible photovoltaic component comprising a solar cell arrangement applied on a carrier film, wherein the photovoltaic component is arranged in the interior, the solar cell arrangement has a curvature, wherein the curvature follows the curved course of the inner surface of the tube at least in places and the solar cell arrangement at least partly covers the inner surface, wherein the covered inner surface forms a light passage surface of the photovoltaic module.

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.

Abstract: A method for producing optoelectronic semiconductor components and an optoelectronic semiconductor component are disclosed. In an embodiment the method includes: A) creating a blank by pultrusion from a glass melt, B) shaping the blank into a billet-shaped optical element with a longitudinal axis, the optical element having a mounting side and a light outlet side, C) producing conductor tracks on the mounting side, D) mounting a plurality of optoelectronic semiconductor chips on the mounting side of the optical element and connecting them to the conductor tracks and E) separating the optical element into the optoelectronic semiconductor components, wherein each optoelectronic semiconductor component comprises at least two of the semiconductor chips, and wherein at least steps A) to D) are performed in the stated sequence.

Abstract: The lamp uses a sealing system with a ceramic supporting element (17) having a short length LA together with a W—Nb leadthrough part (18, 19, 20) and a specially adapted glass solder (21), which is based on an Al2O3 rare earth oxide system. In this case, the W part is accommodated in the supporting part over a length LW of 1 mm, and the aspect ratio LW/DUW, formed from the length LW and the diameter DUW of the W part, is at least 10.

Abstract: The invention relates to a metal halide lamp comprising a ceramic discharge vessel (10), characterized in that an MoV leadthrough is connected to a PCA element (Al2O3) by means of a specific adhesive layer containing Al and Mo.

Abstract: The invention relates to a metal halide lamp comprising a ceramic discharge vessel (21), characterized in that a molybdenum leadthrough (11) is connected to a cermet stopper (15) via an intermetal interface gradient (20).

Abstract: The lamp uses a sealing system with a ceramic supporting element (17) having a short length LA together with a W-Nb leadthrough part (18, 19, 20) and a specially adapted glass solder (21), which is based on an Al2O3 rare earth oxide system. In this case, the W part is accommodated in the supporting part over a length LW of 1 mm, and the aspect ratio LW/DUW, formed from the length LW and the diameter DUW of the W part, is at least 10.

Abstract: The invention relates to a metal halide lamp comprising a ceramic discharge vessel (10), characterized in that an MoV leadthrough is connected to a PCA element (Al2O3) by means of a specific adhesive layer containing Al and Mo.

Abstract: The invention relates to a metal halide lamp comprising a ceramic discharge vessel (21), characterized in that a molybdenum leadthrough (11) is connected to a cermet stopper (15) via an intermetal interface gradient (20).

Abstract: An electrode (35) for metal vapor-containing discharge lamps consists of a high-melting, electrically conductive material, preferably of tungsten or a material which predominantly contains tungsten; it comprises a shaft (36) having a pin-shaped head part (37), which defines a longitudinal axis L, at least one hole (39) being arranged essentially transversely with respect to the longitudinal axis, in particular at an angle of 60 to 90° with respect to the longitudinal axis, in the region of the head part (37).

Abstract: A thick-film resistance 9 with a conductive path 8 of electrically conductive material is provided in the case of a fuel level transmitter for a fuel tank of a motor vehicle. The conductive path 8 is contacted in a sliding manner by a contact element. The material of the contact element exhibits a silver content, which has been reduced in such a manner, that an increase in the resistance of the contact ascribable to the formation of silver compounds, especially silver sulfide, silver sulfite and silver sulfate on the contacting surfaces is negligible.

Abstract: A filling level sensor (6) for a tank (4), particularly a tank of a motor vehicle that can be filled with fuel (20), comprises a bridge that can be displaced along at least two electric sliding contacts by means of an actuator in dependence on the filling level (26). The actuator consists of an actuator that generates a magnetic field (38), and the bridge consists of a conglomerate (36) of electrically conductive particles that can be moved by the magnetic field (38).