Abstract: For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.

Abstract: For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.

Abstract: For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.

Abstract: For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.

Abstract: A resonator mirror with a saturable absorber for a laser wavelength &lgr;L formed of a series of layers of a plurality of semiconductor layers on a substrate, wherein a Bragg reflector formed of a plurality of alternately arranged layers comprising a first material with an index of refraction nH and a second material with a lower index of refraction NL compared with the latter is grown on a surface of the substrate. It is characterized in that a threefold layer is grown on the Bragg reflector, wherein a single quantum layer is embedded within two layers outside an intensity minimum for the laser radiation &lgr;L and the threefold layer has a combined optical thickness of λ L 2 .

Abstract: A process for the production of 4-bromo-2-chloro-phenols of the formula ##STR1## wherein X represents hydrogen or chlorine is disclosed which process comprises the bromination of a 2-chlorphenol of the formula ##STR2## wherein X has the meaning given above in the presence of a compound of the formula ##STR3## in which R.sub.1 represents an alkyl group having 1 to 8 carbon atoms, or the phenyl or benzyl group,R.sub.2 and R.sub.3 independently of one another represent an alkyl group having 1 to 8 carbon atoms,R.sub.4 represents hydrogen, or an alkyl group having 1 to 8 carbon atoms, andX represents chlorine, bromine, or iodine or the hydrogen sulfate anion.The new process substantially avoids the undesired formation of the 2,6-isomers and the 4-bromo-2-chlorophenols are obtained in excellent purity.