Abstract: Please amend the Abstract of the Disclosure to read as follows. In accordance with 37 CFR §1.72, the abstract is submitted herewith on a separate sheet of paper, following page 9 of this amendment.

Abstract: A magnetic recording medium comprising a non-magnetic base which is dimensionally stable at up to 300.degree. C., and an 0.03-0.4 .mu.m thick magnetically hard recording layer of an Sm-Co alloy, vacuum-deposited thereon, which layer possesses uniaxial magnetic anisotropy in the plane of the layer, and a process for the manufacture of this recording medium.

Abstract: A magnetic recording medium comprising a non-magnetic base which is dimensionally stable at up to 300.degree. C., and an 0.03-0.4 .mu.m thick magnetically hard recording layer of an Sm-Co alloy, vacuum-deposited thereon, which layer possesses uniaxial magnetic anisotropy in the plane of the layer, and a process for the manufacture of this recording medium.

Abstract: A magnetic domain storage device comprising a ferromagnetic, polycrystalline metal layer which is applied to a support and comprises areas of different coercivity, the areas of lower coercivity in the form of strip-shaped channels being surrounded by areas of higher coercivity; a system of electrical conductors, extending in planes arranged parallel and in close vicinity to the ferromagnetic layer for creating, propagating and detecting magnetic domains in the channels of lower coercivity; and a baseplate with electrical connections. The areas of lower coercivity follow a path similar to a spiral with its one end adjacent to the center of the support and the other end adjacent to a corner of the support and executing at least one full 360.degree. turn between both ends. The domain storage devices of this type are distinguished by a higher storage capacity.

Abstract: A magnetic thin film storage device of simplified design working on the shift register principle and comprising a flat support to which a ferromagnetic layer has been applied, which layer contains regions of different coercivity, lower-coercivity regions being surrounded by regions of higher coercivity, and also comprising electric conductors extending in planes which are parallel to the support, the conductors serving to produce the magnetic fields required to propagate magnetic domains into the lower-coercivity regions, at least one group of channels being provided which terminate in the same enlarged lower-coercivity area, and the magnetic domains contained in the channels terminating in the said enlarged area being propagated individually and consecutively into that enlarged area.

Abstract: A thin film magnetic storage device consisting of a flat support to which a ferromagnetic layer which areas of different coercive force is applied, the low coercive force areas being surrounded by high coercive force areas, and further consisting of electric conductors extending in planes parallel with the support and used to produce the magnetic fields required for the propagation of magnetic domains in the low coercive force areas. The low coercive force areas are provided in the shape of strip-like channels, and the electric conductors are arranged in two separate planes such that they intersect the channels at right angles and that the conductors of one plane, at points of intersecton with the channels are situated above the gaps between the conductors of the second plane, and that the width of the conductors at points of intersecton with the channels is at least as great as the channel width.