Abstract: A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resist layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photon (e.g. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.

Abstract: High contrast, sensitivity and bath life is obtainable by the addition of inorganic salts, preferably a carbonate, to an aqueous alkali metal base containing a carboxylated surfactant. The preferred alkali metal bases are potassium hydroxide or sodium hydroxide. The carboxylated surfactants contemplated by the invention are those encompassed with the formula:R--O--(CH.sub.2 H.sub.4 O).sub.n --CH.sub.2 --COOXwherein R is a hydrocarbon radical of 6-18 carbon atoms alkyl radical, n has a value of 1-24 and X is a cation such as K.sup.+, Na.sup.+, or H.sup.+. The gain in sensitivity with the incorporation of an inorganic compound furnishing ions, typically an inorganic salt, to the developer with the carboxylated surfactant compared to the sensitivity obtained with developers with carboxylated surfactant and inorganic salts omitted was typically two fold and greater without a corresponding film loss. Examples of salts are those that contain the anions SO.sub.4.sup.2-, CO.sub.3.sup.2-, Cl.sup.-, PO.sub.4.sup.

Abstract: The use of TiO.sub.2 spin-on glass films for reduction of electrostatic charging of a semiconductor substrate upon electron beam exposure is described. Specifically, the disclosure relates to electron beam lithographic processing during semiconductor device or mask fabrication. The TiO.sub.2 glass films may also be utilized for charge dissipation during ion implantation. A thin TiO.sub.2 composition spin-on glass film is used as a charge dissipation layer. This mechanism is effective as a resolution enhancement mechanism during electron beam or ion beam processing of semiconductors. The TiO.sub.2 composition films are prepared from spin-on materials that consist of partially hydrolyzed organotitanium species dissolved in organic solvents which produce glassy films of TiO.sub.2 upon application to silicon and other substrates and subsequent heating. The films are completely amorphous, have extremely low pinhole and particulate densities, are uniform in thickness and free of radial striations.

Abstract: A method is disclosed for the synthesis of ultra-thin silicon nitride (Si.sub.x N.sub.y) films by the direct interaction of a low energy noble ion beam (e.g. Ar.sup.+ or He.sup.+), with NH.sub.3 physically absorbed on a silicon surface. The method is directed toward applications which require the use of ultra-thin insulating layers, such as in MIS technology.The disclosed method provides for the synthesis of ultra-thin films of silicon nitride via the interaction of NH.sub.3 absorbed on a silicon substrate and a low energy nobel ion beam. Preferential absorption of NH.sub.3 is effected by cooling of the substrate below the boiling point of NH.sub.3. The ion beam is used to generate reactive N and Si species which combine to form compounds of silicon nitride. The physical appearance of the films formed by this method is comparable to those produced by low pressure chemical vapor deposition.