Abstract: A vertical semiconductor component for generating an abrupt end point detection signal. The vertical semiconductor component includes: a semiconductor substrate which has a front face and a rear face, the front face being opposite the rear face, and the semiconductor substrate having first chemical elements; a buffer layer which is arranged on the front face of the semiconductor substrate, the buffer layer having second chemical elements; and a semiconductor contact layer which is arranged on the buffer layer, an active region of the vertical semiconductor component being arranged on the semiconductor contact layer. An etching control layer is arranged between the buffer layer and the semiconductor contact layer, the etching control layer having at least one third chemical element which differs from the first chemical elements and the second chemical elements.

Abstract: The aim of the invention is to improve the automated loading of a susceptor with wafers. According to the invention a device for orienting a wafer on a wafer carrier (11) comprises a base element (2) on which to set the wafer carrier (11), wherein the base element (2) has a centering section (3), which interacts with a counter centering section (10) of the wafer carrier (11) in such a way that the wafer carrier (11) set onto the base element (2) assumes a predetermined position in relation to the base element (2), and comprising a centering element (1), which is arranged above the base element (2) and has a predetermined position in relation to the base element (2) and has an adjusting-element carrier (5), on which adjusting elements (6) are arranged in an arrangement corresponding to an outer contour of the wafer, in order to orient the wafer in a plane parallel to the supporting surface (11?) of the wafer carrier.

Abstract: The invention relates to a device for depositing at least one, in particular crystalline, layer on at least one substrate (5), having a susceptor (2) for accommodating the at least one substrate (5), the susceptor forming the floor of a process chamber (1), having a cover plate (3) which forms the ceiling of the process chamber (1), and having a gas inlet element (4) for introducing process gases, which decompose into the layer-forming components in the process chamber as the result of heat input, and a carrier gas, wherein below the susceptor (2) a multiplicity of heating zones (H1-H8) are situated next to one another, by means of which in particular different heat outputs (Q1, Q2) are introduced into the susceptor (2) in order to heat the susceptor surface facing the process chamber (1) and the gas located inside the process chamber (1), a heat dissipation element (8) which is thermally coupled to the cover plate (3) being provided above the cover plate (3) in order to dissipate the heat transported from th