Abstract: A system for in-situ measurement of a curvature of a surface of a wafer comprises: a multiwavelength light source module, adapted to emit incident light comprising a plurality of wavelengths; an optical setup configured to combine the incident light into a single beam and to guide the single beam towards a surface of a wafer such that the single beam hits the surface at a single measuring spot on the surface; and a curvature determining unit, configured to determine a curvature of the surface of the wafer from reflected light corresponding to the single beam being reflected on the surface at the single measuring spot.

Abstract: A system for in-situ measurement of a curvature of a surface of a wafer comprises: a multiwavelength light source module, adapted to emit incident light comprising a plurality of wavelengths; an optical setup configured to combine the incident light into a single beam and to guide the single beam towards a surface of a wafer such that the single beam hits the surface at a single measuring spot on the surface; and a curvature determining unit, configured to determine a curvature of the surface of the wafer from reflected light corresponding to the single beam being reflected on the surface at the single measuring spot.

Abstract: A method for forming silicon carbide onto a silicon substrate by reaction of said silicon substrate and a first precursor comprising indium and a plurality of carbon atoms.

Abstract: The aim of the invention is to improve the automated loading of a susceptor with wafers. According to the invention a device for orienting a wafer on a wafer carrier (11) comprises a base element (2) on which to set the wafer carrier (11), wherein the base element (2) has a centering section (3), which interacts with a counter centering section (10) of the wafer carrier (11) in such a way that the wafer carrier (11) set onto the base element (2) assumes a predetermined position in relation to the base element (2), and comprising a centering element (1), which is arranged above the base element (2) and has a predetermined position in relation to the base element (2) and has an adjusting-element carrier (5), on which adjusting elements (6) are arranged in an arrangement corresponding to an outer contour of the wafer, in order to orient the wafer in a plane parallel to the supporting surface (11?) of the wafer carrier.

Abstract: The invention relates to a device for depositing at least one, in particular crystalline, layer on at least one substrate (5), having a susceptor (2) for accommodating the at least one substrate (5), the susceptor forming the floor of a process chamber (1), having a cover plate (3) which forms the ceiling of the process chamber (1), and having a gas inlet element (4) for introducing process gases, which decompose into the layer-forming components in the process chamber as the result of heat input, and a carrier gas, wherein below the susceptor (2) a multiplicity of heating zones (H1-H8) are situated next to one another, by means of which in particular different heat outputs (Q1, Q2) are introduced into the susceptor (2) in order to heat the susceptor surface facing the process chamber (1) and the gas located inside the process chamber (1), a heat dissipation element (8) which is thermally coupled to the cover plate (3) being provided above the cover plate (3) in order to dissipate the heat transported from th