Abstract: A method for programming ROM memories at an advanced memory manufacture stage. The method, after defining the active regions, possibly implanting threshold-correction boron, performing gate oxidation and providing the gate regions, comprises at least partially masking the regions adjacent to the gate regions of the memory cells which must be made permanently non-conductive. During the subsequent implanting of the source and drain regions, the regions thus shielded are not implanted, so that in the programmed cells at least one region of the source and drain regions is completely missing so as to prevent switching on of the memory cell when reading in the memory.