Abstract: In one aspect, a method of predicting warp in a plurality of wafers after an epitaxial layer deposition process is provided. The method includes receiving, by a processor, a measured resistivity of a first wafer of the plurality of wafers, receiving, by the processor, a measured shape of the first wafer after at least one of a grinding process and an etching process, and calculating, using the processor, a change in wafer shape during the epitaxial layer deposition process. The method further includes superposing, using the processor, the calculated shape change onto the measured shape of the first wafer to determine a post-epitaxial wafer shape and calculating, using the processor, a post-epitaxial warp value based on the determined post-epitaxial wafer shape.

Abstract: In one aspect, a method of predicting warp in a plurality of wafers after an epitaxial layer deposition process is provided. The method includes receiving, by a processor, a measured resistivity of a first wafer of the plurality of wafers, receiving, by the processor, a measured shape of the first wafer after at least one of a grinding process and an etching process, and calculating, using the processor, a change in wafer shape during the epitaxial layer deposition process. The method further includes superposing, using the processor, the calculated shape change onto the measured shape of the first wafer to determine a post-epitaxial wafer shape and calculating, using the processor, a post-epitaxial warp value based on the determined post-epitaxial wafer shape.

Abstract: Methods are disclosed for determining mounting locations of ingots on a wire saw machine. The methods include measuring a test surface of a test wafer previously sliced by the wire saw machine from a test ingot to calibrate the system. A magnitude and a direction of an irregularity of the measured test surface of the test wafer is then determined. The mounting location is then determined for another ingot to be mounted on the ingot holder based on at least one of the magnitude and direction of the irregularity of the measured test surface of the test wafer.

Abstract: Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer.

Abstract: A system for ultrasonically cleaning one or more wires of a wire saw for slicing semiconductor or solar material into wafers. The system includes an ultrasonic transducer connected to a sonotrode. The system also includes a sonotrode plate adjacent to one or more of the wires. The sonotrode plate has an opening that exposes the sonotrode to one or more of the wires. The system further includes a tank for delivering a flow of liquid to contact the sonotrode and one or more of the wires. The tank is positioned on the same side of the wires as the sonotrode plate. The ultrasonic transducer is configured to vibrate and form cavitations in the liquid for the removal of contaminants from a surface of one or more of the wires.

Abstract: Systems and are disclosed for controlling the temperature of bearings in a wire saw machine. The systems described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling the temperature of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Systems are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Methods are disclosed for controlling the displacement of bearings in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by controlling displacement of bearings in the wire saw by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: Methods are disclosed for controlling surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Abstract: A silicon-on-insulator or bonded wafer includes an upper portion having a trapezoid shape in cross-section and a lower portion having an outer peripheral edge having a curved shape.

Abstract: Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.

Abstract: The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.

Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.

Abstract: A method for manufacturing a silicon-on-insulator structure including a substrate wafer, an active wafer, and an oxide layer between the substrate wafer and the active wafer. The method includes the steps of heat treating the structure, trapezoid grinding edges of the wafer, and grinding a surface of the wafer.

Abstract: Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer.

Abstract: Methods for holding a workpiece with a hydrostatic pad are disclosed herein. The pad includes hydrostatic pockets formed in a face of the body directly opposed to the wafer. The pockets are adapted for receiving fluid through the body and into the pockets to provide a barrier between the body face and the workpiece while still applying pressure to hold the workpiece during grinding. The hydrostatic pads allow the wafer to rotate relative to the pads about their common axis. The pockets are oriented to reduce hydrostatic bending moments that are produced in the wafer when the grinding wheels shift or tilt relative to the hydrostatic pads, helping prevent nanotopology degradation of surfaces of the wafer commonly caused by shift and tilt of the grinding wheels.

Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.

Abstract: A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.

Abstract: Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.