Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In an embodiment a light emitting device includes a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and the second layer, a first electric contact connected to an electric contact via, the electric contact via extending electrically isolated through the second layer and the active region and contacting the first layer and a second electric contact contacting the second layer, wherein the first electric contact and the second electric contact are arranged on the second layer on a bottom surface of the semiconductor layer stack, and wherein an interface between a top surface of the semiconductor layer stack and a medium above the top surface is roughened in an area smaller than an area of the top surface.

Abstract: In an embodiment an optoelectronic light emitting device includes at least one light emitting surface configured to emit light of a first wavelength and a conversion layer arranged on the at least one light emitting surface, wherein the conversion layer has a substantially transparent matrix material having a first refractive index in which it is embedded: a plurality of light conversion particles configured to convert the light of the first wavelength into light of a second wavelength and a plurality of homogenization particles consisting essentially of a material having a second refractive index, wherein the first and second refractive indices differ by a value of at most 0.1. The conversion layer of the device has a thickness of less than or equal to 30 ?m and a particle size distribution of the light conversion particles substantially corresponds to a particle size distribution of the homogenization particles.

Abstract: An apparatus and method for loop flattening and reduction in a SIMD pipeline including broadcast, move, and reduction instructions.

Abstract: An apparatus to facilitate ordered thread dispatch for thread teams is disclosed. The apparatus includes one or more processors including a graphic processor, the graphics processor including a plurality of processing resources, and wherein the graphics processor is to: allocate a thread team local identifier (ID) for respective threads of a thread team comprising a plurality of hardware threads that are to be executed solely by a processing resource of the plurality of processing resources; and dispatch the respective threads together into the processing resource, the respective threads having the thread team local ID allocated.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: Examples relate to an apparatus, a device, a method, and a computer program for scheduling an execution of compute kernels on one or more computing devices, and to a computer system comprising such an apparatus or device. The apparatus comprises processing circuitry and interface circuitry. The processing circuitry is configured to determine an impending execution of two or more compute kernels to the one or more computing devices. The processing circuitry is configured to pipeline a data transfer related to the execution of the two or more compute kernels to the one or more computing devices via the interface circuitry.

Abstract: An apparatus and method for loop flattening and reduction in a SIMD pipeline including broadcast, move, and reduction instructions.

Abstract: An apparatus and method for loop flattening and reduction in a SIMD pipeline including broadcast, move, and reduction instructions. One embodiment of a processor comprises: a decoder to decode a broadcast instruction to generate a decoded broadcast instruction identifying a plurality of operations, the broadcast instruction including an opcode and first and second source operands, and having a split value associated therewith; and execution circuitry to execute the operations of the decoded broadcast instruction to copy a first data element specified by the first source operand to each of a first set of contiguous data element locations in a destination register and to copy a second data element specified by the second source operand to a second set of contiguous data element locations in the destination register, wherein the first and second sets of contiguous data element locations are determined in accordance with the split value.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

Abstract: In one embodiment the semiconductor laser (1) comprises a carrier (2) and an edge-emitting laser diode (3) which is mounted on the carrier (2) and which comprises an active zone (33) for generating a laser radiation (L) and a facet (30) with a radiation exit region (31). The semiconductor laser (1) further comprises a protective cover (4), preferably a lens for collimation of the laser radiation (L). The protective cover (4) is fastened to the facet (30) and to a side surface (20) of the carrier (2) by means of an adhesive (5). A mean distance between a light entrance side (41) of the protective cover (4) and the facet (30) is at most 60 ?m. The semiconductor laser (1) is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgF2 and/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.

Abstract: An apparatus and method for loop flattening and reduction in a SIMD pipeline including broadcast, move, and reduction instructions.

Abstract: A converter for an optoelectronic component, an optoelectronic component, a method for forming a converter for an optoelectronic component and a material for a reflector of an optoelectronic component are disclosed. In an embodiment, a converter includes a conversion element for converting a wavelength of electromagnetic radiation which passes through at least a part of the conversion element and a reflector, wherein the reflector includes a reflector material which includes MgF2 and/or an inorganic material as a matrix material in which a plurality of particles is embedded, wherein a refractive index of the matrix material amounts to at least 1 and at most 2, and wherein a refractive index of the particles amounts to at least 1.5.

Abstract: An apparatus and method for loop flattening and reduction in a SIMD pipeline including broadcast, move, and reduction instructions.