Abstract: A photoacoustic detecting device comprises a housing which houses: a lighting module, a photoacoustic cell, comprising an surface contact intended to be placed in contact with the medium to analyse, a photoacoustic cavity extending from the surface contact to a top of the photoacoustic cell, at least one window closing the top of the photoacoustic cell or the contact surface of the photoacoustic cell, at least one subwavelength pattern located on a surface of said window, said subwavelength pattern being configured to focus the light beam on an surface of interest of the medium to analyse, a sensor, linked to the cavity, the sensor being configured to detect a generated signal, said generated signal being generated in the photoacoustic cavity by a photothermic effect in the medium, and wherein the photoacoustic cell, the window and the subwavelength pattern are formed on a single silicon wafer.

Abstract: A photoacoustic detecting device comprises a housing which houses: a lighting module, a photoacoustic cell, comprising an surface contact intended to be placed in contact with the medium to analyse, a photoacoustic cavity extending from the surface contact to a top of the photoacoustic cell, at least one window closing the top of the photoacoustic cell or the contact surface of the photoacoustic cell, at least one subwavelength pattern located on a surface of said window, said subwavelength pattern being configured to focus the light beam on an surface of interest of the medium to analyse, a sensor, linked to the cavity, the sensor being configured to detect a generated signal, said generated signal being generated in the photoacoustic cavity by a photothermic effect in the medium, and wherein the photoacoustic cell, the window and the subwavelength pattern are formed on a single silicon wafer.

Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.

Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.

Abstract: A semiconductor structure includes a barrier layer, a spacer structure, and a channel layer. The barrier layer includes a group III nitride. The spacer structure includes first and second aluminum nitride layers and an intermediate layer. The intermediate layer includes a group III nitride and is between the first and second aluminum nitride layers. The intermediate layer has a first free charge carrier density at an interface with the second aluminum nitride layer. The spacer structure is between the barrier layer and the channel layer. The channel layer includes a group III nitride and has a second free charge carrier density at an interface with the first aluminum nitride layer of the spacer structure. The first aluminum nitride layer, the intermediate layer, and the second aluminum nitride layer have layer thicknesses so the first free charge carrier density is less than 10% of the second free charge carrier density.

Abstract: A semiconductor structure includes a barrier layer, a spacer structure, and a channel layer. The barrier layer includes a group III nitride. The spacer structure includes first and second aluminum nitride layers and an intermediate layer. The intermediate layer includes a group III nitride and is between the first and second aluminum nitride layers. The intermediate layer has a first free charge carrier density at an interface with the second aluminum nitride layer. The spacer structure is between the barrier layer and the channel layer. The channel layer includes a group III nitride and has a second free charge carrier density at an interface with the first aluminum nitride layer of the spacer structure. The first aluminum nitride layer, the intermediate layer, and the second aluminum nitride layer have layer thicknesses so the first free charge carrier density is less than 10% of the second free charge carrier density.

Abstract: A vehicle upfront sensor is described that has a cavity and a sensing element therein. A collision is detected as a function of the deformation of the cavity. The sensing element may be designed as a pressure or temperature sensor, the cavity then being largely closed, so that an adiabatic pressure or temperature increase is measurable.

Abstract: A method of data transmission from a sensor to a control unit and a sensor and control unit are described, the sensor transmitting both differential values and absolute values. The differential values are analyzed in the control unit to perform the function provided, and the absolute values are analyzed for the plausibility check of the function.

Abstract: A vehicle upfront sensor is described that has a cavity and a sensing element therein. A collision is detected as a function of the deformation of the cavity. The sensing element may be designed as a pressure or temperature sensor, the cavity then being largely closed, so that an adiabatic pressure or temperature increase is measurable.

Abstract: A method of data transmission from a sensor to a control unit and a sensor and control unit are described, the sensor transmitting both differential values and absolute values. The differential values are analyzed in the control unit to perform the function provided, and the absolute values are analyzed for the plausibility check of the function.

Abstract: A temperature sensor having sturdy construction is simple to install and to package, is uncomplicated to manufacture, and suitable for reliably detecting rapid temperature changes. The temperature sensor (1) includes a silicon substrate (2) in which at least one porous area (3) is formed, the degree of porosity and the thickness of the porous area (3) being chosen so that the porous area (3) is thermally isolated from the silicon substrate (2). In addition, the temperature sensor (1) includes temperature measuring elements (6, 7) for detecting the temperature difference between the silicon substrate (2) and the porous area (3). The temperature sensor may also include heating elements for testing the sensor function.

Abstract: A method and a device are described for detecting a side impact on a motor vehicle.

Abstract: A device for side impact detection in a motor vehicle, and a plausibility sensor side impact detection. This plausibility sensor is located in a loudspeaker which is already present in the lateral part for playback of music. This loudspeaker is used as a low-frequency microphone, a circuit being provided for the loudspeaker to differentiate between sound and rapid fluctuations in air pressure. This circuit has a bridge circuit, the differential voltage across the bridge then being used as a plausibility signal. The circuit itself is preferably located in the door.

Abstract: A system for side-impact detection is proposed which is distinguished in that both a temperature sensor as well as an acceleration sensor are accommodated in a structural unit. One of the sensors in each case is used for a plausibility check.

Abstract: A device for side impact detection in a motor vehicle, and a plausibility sensor side impact detection. This plausibility sensor is located in a loudspeaker which is already present in the lateral part for playback of music. This loudspeaker is used as a low-frequency microphone, a circuit being provided for the loudspeaker to differentiate between sound and rapid fluctuations in air pressure. This circuit has a bridge circuit, the differential voltage across the bridge then being used as a plausibility signal. The circuit itself is preferably located in the door.