Abstract: In accordance with the present invention, a method for inspecting a semiconductor sample for failures includes the steps of determining a target area for observation on the semiconductor sample, preparing a region in proximity to the target area to provide access to the target area, and mounting the semiconductor sample into a chamber. The chamber provides a capability for removing material in proximity of the target area, and provides a capability for observing the semiconductor sample in-situ. The semiconductor sample is maintained in the chamber while performing the following steps: etching a first material selective to a second material such that the target area has the first material removed therefrom to expose the second material such that the second material is preserved for observation, and monitoring the progress of the etching step to determine a time to discontinue the etching.

Abstract: The impedance of a zone above bulk material in a bin is measured as a probe is reciprocated toward and away from the material in this zone. The direction-change location of the probe which corresponds to the measured impedance reaching a set point value, is detected and utilized to provide the control signal for automatically replenishing the material in the bin.