Abstract: A system and method for identifying explosive or other target materials includes the steps of irradiating a first location and a second location spaced apart from the first location from a sample suspected of including explosives with ultraviolet, visible or infrared light, measuring reflected light emanated from the first sample location (R1) and reflected light emanated from the second sample location (R2), and calculating a normalized difference in reflectivity (?R/ R), wherein R=(R1+R2)/2 is an average reflectivity. A differential reflection spectrum (DRS) is then generated for the sample where ?R=R2?R1 is the difference of the reflectivities of the first and the second sample location. One or more explosives if present are identified in the sample based on comparing the DRS for said sample to at least one reference DRS.

Abstract: The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can enhance the EL output, as compared with conventional spark-processed (sp) silicon. The enhancement of EL output can be due, at least in part, to increasing the light emitting area. The subject method can smooth the sp surface, so as to allow more complete coverage of the sp area with a continuous, semitransparent, conducting film. The smoothening of the sp surface can be accomplished by, for example, introducing into the spark plasma a volatile liquid, such as methanol, ethanol, acetone, in which particles can be suspended and/or in which a heavy ion salt is dissolved. The particles preferably float in the volatile liquid, rather than settle quickly. In a specific embodiment, silicon particles in the range of about 0.

Abstract: The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can enhance the EL output, as compared with conventional spark-processed (sp) silicon. The enhancement of EL output can be due, at least in part, to increasing the light emitting area. The subject method can smooth the sp surface, so as to allow more complete coverage of the sp area with a continuous, semitransparent, conducting film. The smoothening of the sp surface can be accomplished by, for example, introducing into the spark plasma a volatile liquid, such as methanol, ethanol, acetone, in which particles can be suspended and/or in which a heavy ion salt is dissolved. The particles preferably float in the volatile liquid, rather than settle quickly. In a specific embodiment, silicon particles in the range of about 0.

Abstract: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: The present invention pertains to methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods of this invention concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specially, the present invention can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: Methods for altering the magnetic properties of materials and the novel materials produced by these methods. The methods concern the application of high voltage, high frequency sparks to the surface of materials in order to alter the magnetic properties of the materials. Specificaly this method can be applied to diamagnetic silicon to produce ferromagnetic spark-processed silicon.

Abstract: A method of forming a crystalline thin film from an amorphous semiconductor thin film such as amorphous silicon, by providing a generally planar nucleation inducing member, such as a crystalline silicon wafer, having a number of micro-scale surface contact points and with a hardness equal to or greater than the hardness of the amorphous semiconductor thin film, contacting under pressure the surface contact points of the nucleation inducing member with the exposed surface of the amorphous thin film to form an assembly, annealing the assembly at between 300 to 700 degrees C. for 1 to 24 hours to crystallize the amorphous thin film, and removing the nucleation inducing member.

Abstract: A method for the manufacture of a photoluminescing layer on a normally non-photoluminescing semiconductor substrate, such as a porous silicon layer created on a silicon substrate, by treating the surface of the substrate with a relatively high energy, pulsed laser beam.

Abstract: A high frequency, high voltage spark generator is used to create a large number of sparks to erode the surface of a silicon wafer to a depth of up to 100 microns. After a sufficient amount of erosion has occurred, but prior to any macro-scale removal of material, the surface layer of the silicon wafer becomes porous and photoluminescing. The method can be performed in ambient atmosphere and temperature, or in specific gas atmospheres and at different temperatures. The method produces photoluminescing porous silicon layers on p-type, n-type, low-doped, high-doped or undoped silicon wafers.