Abstract: A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.

Abstract: The invention relates to a method for optically detecting at least one entity which is arranged on a substrate. The at least one entity is scanned with a measuring volume using at least one radiation source and a confocal optic. During a scanning process an auxiliary focus is generated by means of at least one second radiation source and a second optic. Radiation generated by the first radiation source is collimated by a first optic and radiation generated by the second radiation source is collimated by a second optic. A retroreflection from the auxiliary focus is detected by at least one detector and is used to measuring the position of an interface and, thus, for indirectly positioning the measuring volume. The position of the auxiliary focus relative to the measuring volume is adjustable in a defined manner.

Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is typically at least about 0.15, more desirably about 0.2-0.25.

Abstract: The invention belongs to the field of protein production in prokaryotic cells. The invention relates to methods for the production of recombinant DNA-derived heterologous protein in prokaryotic cells, wherein the heterologous protein is secreted extracellularly as an active and correctly folded protein, and the prokaryotic cell contains and expresses a vector comprising the DNA coding for the heterologous protein operably linked to the DNA coding for the signal peptide OmpA.

Abstract: A magnetically opaque medical device is disclosed wherein a contrast agent is incorporated into the actual device. The medical device is generally comprised of a base material forming the structure of the device and a contrast agent, such as tocopherol and tocopherol derivative solutions or suspensions, gadolinium, or nickel sulfate integrated into the base material itself or posited on a substantial portion of an exterior surface of the device. The device may include other additional functional agents and layers.

Abstract: The present invention is directed to the design of a plasma CVD chamber which provides more uniform conditions for forming thin CVD films on a substrate. In one embodiment, an apparatus for processing semiconductor substrates comprises a chamber defining a plasma processing region therein. The chamber includes a bottom, a side wall, and a dome disposed on top of the side wall. The dome has a dome top and having a side portion defining a chamber diameter. A top RF coil is disposed above the dome top. A side RF coil is disposed adjacent the side portion of the dome. The side RF coil is spaced from the top RF coil by a coil separation. A ratio of the coil separation to the chamber diameter is at least about 0.15, more desirably about 0.2–0.25.

Abstract: A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element clad with a malleable heat sink is disposed in the groove. Substantially no air is trapped between the clad heater element and the groove. An insert is disposed in the groove above the heater. The insert substantially completely covers and contacts the clad heater element and the sides of the groove. A cap is disposed in the groove above the insert. The cap covers and contacts the insert and has an upper surface disposed substantially flush with the support surface.

Abstract: A method and apparatus for forming a substrate support is provided herein. In one embodiment, the substrate support includes a body having a support surface and at least one groove. A heater element surrounded with a malleable heat sink is disposed in the groove. The heat sink may be comprised of one or more parts. A cap is disposed in the groove above the heat sink and has an upper surface disposed substantially flush with the support surface.

Abstract: A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes a unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.

Abstract: A substrate carrier for carrying one or more substrates comprises a bottom surface, a top surface opposed to the bottom surface, one or more recesses formed into the top surface, each of the one or more recesses having a support surface that defines a support region for a substrate. The support region is adapted to contact a bottom of the substrate. The support region may have a thickness less than a depth of the one or more recesses. The support region may comprise a porous material to permit thermal fluid to percolate through the support region.

Abstract: The invention belongs to the field of thrombolysis and of tissue plasminogen activator (tPA) derivative production in prokaryotic cells. The invention relates to methods for the production of a recombinant DNA-derived tPA, a variant therof or a (Kringle 2 Serine) K2S molecule or a variant therof in prokaryotic cells, wherein the tPA or K2S or variant is secreted extracellularly as an active and correctly folded protein, and the prokaryotic cell contains and expresses a vector comprising the DNA coding for the tPA or K2S or variant operably linked to the DNA coding for the signal peptide OmpA. The invention further relates to specific K2S derivatives obtainable by the method. The invention further relates to the DNA molecules and the use of the DNA molecules in the methods.

Abstract: The invention belongs to the field of thrombolysis and of tissue plasminogen activator (tPA) derivative production in prokaryotic cells. The invention relates to methods for the production of a recombinant DNA-derived tPA, a variant therof or a (Kringle 2 Serine) K2S molecule or a variant therof in prokaryotic cells, wherein the tPA or K2S or variant is secreted extracellularly as an active and correctly folded protein, and the prokaryotic cell contains and expresses a vector comprising the DNA coding for the tPA or K2S or variant operably linked to the DNA coding for the signal peptide OmpA. The invention further relates to specific K2S derivatives obtainable by the method. The invention further relates to the DNA molecules and the use of the DNA molecules in the methods.

Abstract: A substrate storage cassette and a method of orienting a substrate disposed therein are provided. In one embodiment, the substrate storage cassette includes a plurality of flanges pairs disposed between a first lateral sidewall coupled in a spaced-apart relation to a second lateral sidewall. Each of the flange pairs adapted to support a substrate thereon. At least a first alignment feature disposed between the flange pair and adapted to mate with an orientation feature of the substrate when the substrate is in a predefined orientation.

Abstract: A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system includes an unitary, isolatable, transportable canister having a plurality of first spacing elements, a plurality of second spacing elements and a solid material disposed within the canister. The spacing elements have different mean diameters. The solid material is adapted to produce a gas vapor when exposed to a temperature above a predetermined level at a predetermined pressure. In another embodiment, an apparatus for generating gas includes a gas source coupled to a processing chamber by a first gas line. A canister is coupled in-line with the first gas line and contains a solid material that produces a process gas when heated. A heater is disposed between the gas source and the canister to heat gas flowing into the canister.

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

Abstract: Disclosed herein is an easy and well-integrated method of etching features to different depths in a crystalline substrate, such as a single-crystal silicon substrate. The method utilizes a specialized masking process and takes advantage of a highly selective etch process. The method provides a system of interconnected, variable depth reservoirs and channels. The plasma used to etch the channels may be designed to provide a sidewall roughness of about 200 nm or less. The resulting structure can be used in various MEMS applications, including biomedical MEMS and MEMS for semiconductor applications.

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

Abstract: The invention relates to advantageous processes for preparing heterologous proteins in prokaryotic host cells by improved codon use and/or expression of tRNAs which code for codons occurring rarely in said host cell.

Abstract: The temperature of a plasma chamber of a semiconductor fabrication tool is maintained substantially constant utilizing a variety of techniques, separately or in combination. One technique is to provide the exterior surface of the plasma chamber dome with a plurality of fins projecting into high velocity regions of an overlying airflow in order to dissipate heat from the chamber. Ducting defined by cover overlying the exposed exterior surface of the dome may also feature projecting lips or an airfoil to place high velocity components of the airflow into contact within the exterior dome surface and the fins. Other techniques include employing a high speed fan to control airflow circulation, and the use of temperature sensors in communication the fan through a processor to control fan speed and thereby regulate chamber temperature.

Abstract: Disclosed are methods of plasma etching through a substrate while preventing rapid leakage of heat transfer fluid during the etch process, protecting process chamber hardware underlying said substrate, and separating components within said substrate while maintaining said components in a position relative to other components within said substrate. The method involves application of a disposable protective barrier layer to the backside of the substrate prior to etching and then removing the barrier layer subsequent to etching.