Abstract: A method of manufacturing quantum structures, in particular quantum dots and tunnel barriers and also a component with such quantum structures wherein in that a substrate is structured by the intentional formation of trenches so that material remains between oppositely disposed trench sections, with a transition from a broader region to a narrower region; wherein further material is deposited onto the substrate so that differential growth sets in on the remaining regions of the substrate and an inclined surface arises in the transition region between the broader region and the narrower region and a material height increase arises in the narrower region relative to the broader region; and wherein a different material, or a material of different conductivity, is subsequently deposited, whereby a tunnel barrier arises on the inclined surface and/or a quantum dot arises at the upper end of the inclined surface.