Abstract: A limiting circuit has a signal input and a signal output for limiting an output signal that is present at the signal output and that can be fed to a further circuit connected to the output of the limiting circuit. A voltage connection for feeding a bias voltage and a transistor are present, wherein the gate connection of the transistor is connected to the voltage connection by means of a first matching circuit and to the signal input by means of a second matching circuit.

Abstract: A limiting circuit has a signal input and a signal output for limiting an output signal that is present at the signal output and that can be fed to a further circuit connected to the output of the limiting circuit. A voltage connection for feeding a bias voltage and a transistor are present, wherein the gate connection of the transistor is connected to the voltage connection by means of a first matching circuit and to the signal input by means of a second matching circuit.

Abstract: In a method and apparatus for compensating for gain changes in an amplifier circuit comprising radio-frequency modules and attenuation elements, a radio-frequency module is driven with a first temperature-dependent monitoring voltage UHF(T), and an attenuation element with a second temperature-dependent monitoring voltage UVG(T). The first temperature-dependent monitoring voltage UHF(T) is produced by applying a temperature dependency to an individual monitoring voltage Uopt, which is predetermined for a predetermined temperature for a radio-frequency module, in order to set the optimum operating point of the radio-frequency module. The second temperature-dependent monitoring voltage UVG(T) is produced by applying a temperature dependency to a predetermined monitoring voltage UVG—T for the attenuation element. The monitoring voltage UVG—T is determined in an iteration method, such that the output power of the amplifier circuit reaches a predeterminable level at a constant input power.

Abstract: In a method and apparatus for compensating for gain changes in an amplifier circuit comprising radio-frequency modules and attenuation elements, a radio-frequency module is driven with a first temperature-dependent monitoring voltage UHF(T), and an attenuation element with a second temperature-dependent monitoring voltage UVG(T). The first temperature-dependent monitoring voltage UHF(T) is produced by applying a temperature dependency to an individual monitoring voltage Uopt, which is predetermined for a predetermined temperature for a radio-frequency module, in order to set the optimum operating point of the radio-frequency module. The second temperature-dependent monitoring voltage UVG(T) is produced by applying a temperature dependency to a predetermined monitoring voltage UVG—T for the attenuation element. The monitoring voltage UVG—T is determined in an iteration method, such that the output power of the amplifier circuit reaches a predeterminable level at a constant input power.

Abstract: The invention relates to an integrated HF circuit with attenuators, exhibiting an input, an output, and a number of field effect transistors as switching elements with a number of positive supply voltages, wherein the attenuators control, according to an attenuation state, which can be switched between two states, the amplitude of a reference signal, applied to the input, and produces an actual signal at the output. According to the invention, the attenuators exhibit a number of inductors and/or capacitors for phase compensation, and the field effect transistors may be driven without power.

Abstract: A semiconductor circuit for switching and/or amplitude influencing of an analog desired signal fed to the input (EA, AE) of the circuit (1) to an analog actual signal in the high-frequency range generated by the circuit at the output (AE, EA). The circuit (1) has two bipolar transistors (T1, T2) arranged with respect to one another such that the collector terminal (K1, K2) of the one bipolar transistor (T1, T2) is connected with the emitter terminal (E2, E1) of the other bipolar transistor (T2, T1) and vice-versa. The bipolar transistors (T1, T2) are controlled by a control quantity fed to the base terminals (B1, B2) of the transistors (T1, T2).

Abstract: The invention relates to an integrated HF circuit with attenuators, exhibiting an input, an output, and a number of field effect transistors as switching elements with a number of positive supply voltages, wherein the attenuators control, according to an attenuation state, which can be switched between two states, the amplitude of a reference signal, applied to the input, and produces an actual signal at the output. According to the invention, the attenuators exhibit a number of inductors and/or capacitors for phase compensation, and the field effect transistors may be driven without power.

Abstract: A driver circuit for the generation of a switching voltage, particularly a negative switching voltage, which is suitable for GaAs technology. Field effect transistors whose electric properties can vary within a wide range and ohmic resistances that do not have to be adjusted later are used. The driver circuit is particularly suited for the selection of HF components.

Abstract: A constant-current source that contains two substantial identical field effect transistors as well as a simple resistance network. The actual saturation current of one of the field effect transistors is measured and converted by the resistance network into a control voltage for the other field effect transistor which produces the desired constant current. With such a circuit, production tolerances, especially tolerances for field effect transistor, as well as operation-dependent temperature variations can be compensated for within a wide range.